SnS/CZTSSe异质结太阳能电池的数值模拟

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-01-01 DOI:10.15251/jor.2023.191.31

J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng

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引用次数: 1

摘要

本工作结合SnS和CZTSSe的优点组成了SnS/CZTSSe异质结太阳能电池，并通过数值模拟研究了各种因素对电池性能的影响。结果表明，CZTSSe和SnS的最佳厚度分别为0.1μm和2.0μm。此外，CZTSSe和SnS的最佳掺杂浓度分别为1×1017cm-3和1×1016cm-3。此外，当CZTSSe和SnS的高斯缺陷态密度分别小于1×1016cm-3和1×1014cm-3，并且这两种材料的尾部缺陷态密度都小于1×10.19cm-3eV-1时，缺陷态对电池性能的影响很小。此外，SnS/CZTSSe异质结太阳能电池的电势转换效率可达23.92%

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Numerical simulation of SnS/CZTSSe heterojunction solar cells

This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.