MAPbClxBr3-x上外延FAPbI3的晶格弛豫(001)

Q4 Engineering

International Journal of High Speed Electronics and Systems Pub Date : 2022-03-01 DOI:10.1142/s0129156422400067

Elisa Parent, J. Raphael, T. Kujofsa, J. Ayers

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引用次数: 0

摘要

卤化物钙钛矿材料，如FAPbI3，对光伏应用非常感兴趣，如果化学不稳定性、应变和晶体缺陷的问题得到解决，可以取代硅电池。在本文中，我们对MAPbClxBr3-x（001）上外延FAPbI3的晶格弛豫进行了初步的建模研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001)

Halide perovskite materials such as FAPbI3 are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI3 on MAPbClxBr3-x (001).

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来源期刊

International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.60

自引率

0.00%

发文量

期刊介绍： Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.