硅极晶体管和硅极晶体管直流/直流系统特性的比较研究

Q4 Engineering

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska Pub Date : 2018-05-30 DOI:10.5604/01.3001.0012.0715

Karol Fatyga, Łukasz Kwaśny, Bartłomiej Stefańczak

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引用次数: 6

摘要

本文比较了两种基于双H桥拓扑结构的双向DC/DC变换器的效率。测试的转换器使用硅基IGBT晶体管和SiC基MOSFET构建。研究结果是效率特性，取自10÷60 kHz频率范围内的测试。对结果的分析表明，与硅基设计相比，SiC基设计具有巨大的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.

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来源期刊

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

10 weeks