硅极晶体管和硅极晶体管直流/直流系统特性的比较研究

Q4 Engineering

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska Pub Date : 2018-05-30 DOI:10.5604/01.3001.0012.0715

Karol Fatyga, Łukasz Kwaśny, Bartłomiej Stefańczak

{"title":"硅极晶体管和硅极晶体管直流/直流系统特性的比较研究","authors":"Karol Fatyga, Łukasz Kwaśny, Bartłomiej Stefańczak","doi":"10.5604/01.3001.0012.0715","DOIUrl":null,"url":null,"abstract":"This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.\n\n","PeriodicalId":53131,"journal":{"name":"Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS\",\"authors\":\"Karol Fatyga, Łukasz Kwaśny, Bartłomiej Stefańczak\",\"doi\":\"10.5604/01.3001.0012.0715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.\\n\\n\",\"PeriodicalId\":53131,\"journal\":{\"name\":\"Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5604/01.3001.0012.0715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5604/01.3001.0012.0715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 6

摘要

本文比较了两种基于双H桥拓扑结构的双向DC/DC变换器的效率。测试的转换器使用硅基IGBT晶体管和SiC基MOSFET构建。研究结果是效率特性，取自10÷60 kHz频率范围内的测试。对结果的分析表明，与硅基设计相比，SiC基设计具有巨大的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS

This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

10 weeks