J. Choi, Chan Woo Park, B. Na, Jong-Heon Yang, J. Na, JaeEun Pi, Hee‐Ok Kim, Chi-Sun Hwang, Seunghyup Yoo
{"title":"用于可拉伸电子器件的高度稳定的Mo/Al双层电极","authors":"J. Choi, Chan Woo Park, B. Na, Jong-Heon Yang, J. Na, JaeEun Pi, Hee‐Ok Kim, Chi-Sun Hwang, Seunghyup Yoo","doi":"10.1080/15980316.2022.2163313","DOIUrl":null,"url":null,"abstract":"Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up to 220% elongation and no significant change in resistance. In Al-only electrodes, Al penetrates into the polyimide (PI) because of its high chemical reactivity with PI. This issue can be overcome by inserting Mo underneath the Al layer, blocking the reaction between Al and PI and enabling the formation of robust and highly conductive stretchable electrodes. With the proposed bilayer electrodes, stretchable thin-film transistor arrays that can be operated even when elongated up to 220% are realized. The fabricated devices exhibit very stable device performance under highly stretched conditions.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2023-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly stable Mo/Al bilayer electrode for stretchable electronics\",\"authors\":\"J. Choi, Chan Woo Park, B. Na, Jong-Heon Yang, J. Na, JaeEun Pi, Hee‐Ok Kim, Chi-Sun Hwang, Seunghyup Yoo\",\"doi\":\"10.1080/15980316.2022.2163313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up to 220% elongation and no significant change in resistance. In Al-only electrodes, Al penetrates into the polyimide (PI) because of its high chemical reactivity with PI. This issue can be overcome by inserting Mo underneath the Al layer, blocking the reaction between Al and PI and enabling the formation of robust and highly conductive stretchable electrodes. With the proposed bilayer electrodes, stretchable thin-film transistor arrays that can be operated even when elongated up to 220% are realized. The fabricated devices exhibit very stable device performance under highly stretched conditions.\",\"PeriodicalId\":16257,\"journal\":{\"name\":\"Journal of Information Display\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2023-01-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Information Display\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1080/15980316.2022.2163313\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Information Display","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/15980316.2022.2163313","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Highly stable Mo/Al bilayer electrode for stretchable electronics
Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up to 220% elongation and no significant change in resistance. In Al-only electrodes, Al penetrates into the polyimide (PI) because of its high chemical reactivity with PI. This issue can be overcome by inserting Mo underneath the Al layer, blocking the reaction between Al and PI and enabling the formation of robust and highly conductive stretchable electrodes. With the proposed bilayer electrodes, stretchable thin-film transistor arrays that can be operated even when elongated up to 220% are realized. The fabricated devices exhibit very stable device performance under highly stretched conditions.