局域态共隧道双量子反点中的可调谐隧道耦合

IF 3.2 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
T. Hata, Kazuhiro Sada, Tomoki Uchino, D. Endo, T. Akiho, K. Muraki, T. Fujisawa
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引用次数: 0

摘要

在量子霍尔(QH)机制中控制量子反点(QAD)之间的隧道耦合是有问题的。我们提出并演示了一种用于两个QAD之间的可调谐隧道耦合的方案,该方案通过利用经由局部状态的共隧道过程作为第三个QAD。即使在恒定的最近邻隧道耦合的情况下,也可以通过改变局部水平来调节有效的隧道耦合。我们系统地研究了Landau水平填充因子$\nu=2$下有效三重QAD系统中传输特性的变化。通过分析电荷稳定性图中库仑阻断峰的反交叉,阐明了可调谐隧道耦合,这与基于主方程的数值模拟一致。该方案对于研究QH系统中的相干和相互作用是有吸引力的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tunable tunnel coupling in a double quantum antidot with cotunneling via localized state
Controlling tunnel coupling between quantum antidots (QADs) in the quantum Hall (QH) regime is problematic. We propose and demonstrate a scheme for tunable tunnel coupling between two QADs by utilizing a cotunneling process via a localized state as a third QAD. The effective tunnel coupling can be tuned by changing the localized level even with constant nearest-neighbor tunnel couplings. We systematically study the variation of transport characteristics in the effectively triple QAD system at the Landau level filling factor $\nu =2$. The tunable tunnel coupling is clarified by analyzing the anti-crossing of Coulomb blockade peaks in the charge stability diagram, in agreement with numerical simulations based on the master equation. The scheme is attractive for studying coherence and interaction in QH systems.
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来源期刊
Physical Review B
Physical Review B PHYSICS, CONDENSED MATTER-
CiteScore
6.30
自引率
32.40%
发文量
4177
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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