Si（111）上生长的掺Mn晶体和非晶Ge薄膜的磁性

IF 1.4 Q3 PHYSICS, MULTIDISCIPLINARY

Turkish Journal of Physics Pub Date : 2020-02-12 DOI:10.3906/fiz-1909-17

İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN

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引用次数: 1

摘要

研究了晶序对热扩散法制备超薄掺杂锗薄膜结构和磁性能的影响。在退火阶段发生的掺杂运动似乎有很大的不同，这取决于Ge层是处于晶态还是非晶态。温度相关磁化曲线的细节表明，a-MnGe和c-MnGe薄膜分别在300K和~250K时表现出铁磁性。在非晶态Ge薄膜上形成具有弱各向异性平面内磁化的Mn5 Ge3铁磁性薄膜，而在晶态Ge薄膜上，由于Mn原子通过Ge层扩散并与Si衬底相互作用，形成了弱铁磁性Mn5 Gex Si3−x纳米结构。

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Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)

We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.

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来源期刊

Turkish Journal of Physics PHYSICS, MULTIDISCIPLINARY-

CiteScore

3.50

自引率

0.00%

发文量

期刊介绍： The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.