FTO(氟掺杂锡氧化物)导电玻璃制备过程中沉积时间和衬底温度的影响

IF 0.6 Q4 METALLURGY & METALLURGICAL ENGINEERING

Metalurgija Pub Date : 2017-04-28 DOI:10.14203/METALURGI.V32I1.160

T. Arini, L. H. Lalasari, A. H. Yuwono, F. Firdiyono, L. Andriyah, A. Subhan

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引用次数: 0

摘要

制造FTO（氟掺杂的氧化锡）有望取代ITO（铟锡氧化物），因为该工艺简单且成本相对较低。采用溶胶-凝胶法制备了氟掺杂的氯化锡前驱体，并采用喷雾热解法制备了涂层工艺。这是DSSC器件结构的一个新突破。该实验使用原料氯化锡（II）水合物（SnCl2.2H2O）作为前体，氟化铵（NH4F）的掺杂率为6wt%，温度变化为250、300、350、400°C，时间电阻率为5、20、30和40分钟。结果表明，沉积时间越长，导电玻璃电阻率值越低。这种情况会降低透射率的值。在300°C的衬底温度下，沉积时间变化5分钟，获得高透射率和低电阻率，电阻率值为3.16 x 10-4Ω.cm，透射率值为86.74%Abstrak。由于制造工艺简单，成本相对较低，这种掺氟氧化锡有望取代ITO功能。通过溶胶-凝胶法和热解喷雾过滤工艺制备的掺杂氟的氯化铜前体可以被认为是太阳能电池-太阳能系统对色素敏感结构的一个新突破。该实验使用氯化氢铜（II）-铜（SnCl2.2H2O）作为前体，佛罗里达铵（NH4F）作为6重量%的掺杂率，温度变化为250、300、350、400°C，时间变化为5、20、30和40分钟。实验结果表明，沉积时间越长，导电玻璃的电阻值越小。但是沉积时间越长，透射值就会降低。在本实验中，在300°C的衬底温度下，在5分钟的存储时间变化下获得了高传输和低电阻，弹性值为3.16 x 10-4Ω.cm，传输值为86.74%。

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Pengaruh Waktu Deposisi dan Temperatur Substrat Terhadap Pembuatan Kaca Konduktif FTO (Fluorine doped Tin Oxide) [The Influence of Deposition Time and Substrate Temperature in Manufacturing Process of FTO (Fluorine doped Tin Oxide) Conductive Glass]

Manufacturing FTO (fluorine-doped tin oxide) is expected to replace ITO (indium tin oxide) because the process is simple and relatively low cost. Tin chloride precursor with fluorine doping is prepared via sol-gel method with a coating process with spray pyrolisis technique can be considered as a new breakthrough in DSSC device structures. This experiment uses the raw material tin (II) chloride hydrate (SnCl2.2H2O) as precursors and ammonium fluoride (NH4F) as a doping ratio of 6% wt with variation in temperatures of 250, 300, 350, 400 °C and time resistivities of 5, 20, 30 and 40 minutes. The results showed that the longer deposition time decreasing value of conductive glass resistivity. This condition would reduce the value of transmittance. High transmittance and low resistivity obtained on the variation of deposition time 5 minutes with a substrate temperature of 300 °C with a resistivity value of 3.16 x 10-4 Ω.cm and transmittance value of 86.74% Abstrak Pembuatan FTO (flourine-doped tin oxide) ini diharapkan dapat menggantikan fungsi ITO (indium tin oxide) karena proses pembuatan yang sederhana dan biaya yang relatif rendah. Prekursor timah klorida dengan doping flourine yang dipreparasi melalui metode sol-gel dengan proses pelapisan dengan teknik spray pyrolisis dapat dipertimbangkan sebagai suatu terobosan baru di dalam struktur device sel surya tersensitasi zat pewarna. Percobaan ini menggunakan bahan baku timah (II) klorida hidrat (SnCl2.2H2O) sebagai prekursor dan amonium florida (NH4F) sebagai doping dengan rasio 6 %berat dengan variasi temperatur 250, 300, 350, 400 °C dan dengan variasi waktu 5, 20, 30, dan 40 menit. Hasil percobaan menunjukkan bahwa semakin lama waktu deposisi maka akan semakin kecil nilai resistivitas kaca konduktif. Namun semakin lama waktu deposisi akan mengurangi nilai transmitansi. Pada percobaan ini menghasilkan transmitansi tinggi dan resistivitas rendah diperoleh pada variasi waktu deposisi 5 menit dengan temperatur substrat 300 °C dengan nilai resitivitas 3,16 x 10-4 Ω.cm dan nilai transmitansi 86,74%.

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来源期刊

Metalurgija 工程技术-冶金工程

CiteScore

1.20

自引率

33.30%

发文量

审稿时长

4-8 weeks

期刊介绍： The journal Metalurgija is primary scientific periodical that publishes scientific papers (original papers, preliminary notes, reviewed papers) as well as professional papers from the area of basic, applicable and developing researching in metallurgy and boundary metallurgy areas (physics, chemistry, mechanical engineering). These papers relate to processing ferrous and non-ferrous metallurgy, treating investigating as well as testing of raw materials, semi products and products, especially in the area of improving new materials and possibilities of their implementation. The journal is the only national periodical of this kind in the Republic of Croatia and covers the scientific field of metallurgy, especially: physical metallurgy and materials; process metailurgy, (ferrous and non-ferrous); mechanical metallurgy (processing, power , etc.); related (adjoing) branches: mechanlcal engineering, chemistry, physics etc.