δ掺杂双势垒GaAs/AlGaAs RTD的理论研究

{"title":"δ掺杂双势垒GaAs/AlGaAs RTD的理论研究","authors":"M. Singh, M. J. Siddiqui, P. A. Alvi","doi":"10.12816/0044602","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":16506,"journal":{"name":"Journal of New Technology and Materials","volume":"7 1","pages":"47-55"},"PeriodicalIF":0.8000,"publicationDate":"2017-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical Investigation of δ-doped Double Barriers GaAs/AlGaAs RTDs at varying device geometry and temperature dependence\",\"authors\":\"M. Singh, M. J. Siddiqui, P. A. Alvi\",\"doi\":\"10.12816/0044602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":16506,\"journal\":{\"name\":\"Journal of New Technology and Materials\",\"volume\":\"7 1\",\"pages\":\"47-55\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2017-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of New Technology and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.12816/0044602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of New Technology and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.12816/0044602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}