超快激发下InGaN量子阱太赫兹发射的影响因素

IF 1.8 4区物理与天体物理 Q3 OPTICS

International Journal of Optics Pub Date : 2023-02-06 DOI:10.1155/2023/5619799

Muhammad Farooq Saleem, G. A. Ashraf, Muhamad Faisal Iqbal, R. Khan, Muhammad Javid, Tianwu Wang

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引用次数: 0

摘要

生长在c面蓝宝石衬底上的InGaN量子阱（QW）由于晶格失配而经历应变。应变在QW中产生强压电场，在超快激发下有助于太赫兹发射。诸如QW宽度、周期数和铟浓度之类的物理参数可以影响压电场的强度并导致太赫兹发射。实验参数，如泵浦注量、激光能量、激发功率、泵浦偏振角和入射角，可以进行调谐，以进一步优化太赫兹发射。本文综述了太赫兹发射的物理和实验参数对InGaN量子阱的影响。比较了量子阱中的光致发光特性和太赫兹发射之间的关系，进一步解释了InGaN量子阱中太赫兹发射的起源。

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Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.

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来源期刊

International Journal of Optics Physics and Astronomy-Atomic and Molecular Physics, and Optics

CiteScore

3.40

自引率

5.90%

发文量

审稿时长

13 weeks

期刊介绍： International Journal of Optics publishes papers on the nature of light, its properties and behaviours, and its interaction with matter. The journal considers both fundamental and highly applied studies, especially those that promise technological solutions for the next generation of systems and devices. As well as original research, International Journal of Optics also publishes focused review articles that examine the state of the art, identify emerging trends, and suggest future directions for developing fields.