磁性MEMS器件用铁锰钨薄膜的合成与表征

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-05-01 DOI:10.15251/jor.2023.193.253

A. Poongodi, N. Thangaraj

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引用次数: 0

摘要

采用不同电流密度、不同沉积时间的电沉积技术制备了Fe-Mn-W薄膜。电沉积法是一种灵活且成本较低的方法，可以生产厚度、形状和尺寸可控的合金。用振动样品磁强计研究了Fe-Mn-W合金薄膜的磁滞回线。利用X射线衍射（XRD）和扫描电子显微镜（SEM）计算了沉积薄膜的晶体尺寸和表面形貌。利用能谱仪（EDAX）对薄膜的成分进行了鉴定。采用金刚石硬度计对沉积薄膜的硬度和附着力进行了研究。

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Synthesis and characterization of ferrous manganese tungsten thin films for magnetic MEMS devices

Fe-Mn-W thin films were synthesized by electrodeposition technique with different current density and different deposition time. Electrodeposition method is a flexible and less expensive avenue which produces alloys in controlled thickness, shapes and sizes. The hysteresis loops of Fe-Mn-W alloys films were studied by using vibrating sample magnetometer. The crystalline size and surface morphology of the deposited thin films were calculated by using X-ray diffraction (XRD) studies and Scanning Electron Microscope (SEM). Energy Dispersive X-ray Spectroscopy (EDAX) was used to identify the components of the films. Hardness and adhesion of the deposited thin films were investigated by Vickers hardness tester using diamond intender method.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.