分子大小的氧化铕团簇在确定ZnO纳米晶体的光学性质中的作用

S. Mukherjee, S. Katea, Emille M Rodrigues, C. Segre, Eva Hemmer, P. Broqvist, H. Rensmo, G. Westin
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引用次数: 0

摘要

ZnO掺杂5 at的详细结构。用EXAFS研究了大价Eu3+-离子的%(金属),以描述局部Eu和Zn配位。通过XRD、SEM和TEM等分析方法,获得了在200 ~ 900℃合成的ZnO:5%Eu海绵的微观结构、晶相、含量和ZnO单胞参数。当温度为600℃时,XRD显示出h-ZnO单峰,而在700℃及更高温度下加热时,h-ZnO:Eu和c-Eu2O3相分离。XRD显示,与未掺杂ZnO相比,在600℃下制备的无相分离的清洁氧化物的ZnO单位电池体积增加了约0.4 vol%,接近于零。锌的EXAFS数据显示出几乎完整的局部氧化锌结构。Eu EXAFS在200-600℃样品中显示出异常低的配位数(CN),约为5,而随着c-Eu2O3的形成,CN随着温度的升高而增加。将23个由1 ~ 4个Eu3+- zn2 +-空位- Eu3+对构建的含eu -团簇的dft生成的理论ZnO结构与实验数据进行了比较。与未掺杂ZnO相比,当将两个或四个Eu3+- zn2 +-空位- Eu3+对组合成Eu4和Eu8簇时,得到了最低的形成能和ZnO单位电池体积增加(0.6-0.7 vol%),平均Eu CN约为5。这些理论确定的最低能结构均与EXAFS和XRD实验结果吻合较好。对不同温度下获得的ZnO:5at%Eu海绵进行的光致发光激发和发射光谱显示,在600°C和800°C时获得的样品的特征Eu3+跃迁强烈猝灭,这很可能是由于ZnO缺陷态的变化(这对Eu3+激发至关重要)以及Eu聚类和C - Eu2O3相分离时的自猝灭。因此,光学数据进一步支持了EXAFS, DFT和XRD技术发现的Eu聚类,证实了这些材料中的结构-性质关系。总的来说,据我们所知,本文报道的发现指向了一种与先前文献中提出的结构非常不同的掺杂结构。这表明半导体ZnO可以承载分子大小的金属氧化物团簇,这与ZnO非常不同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Molecular sized Eu-oxide clusters in defining optical properties in crystalline ZnO nanosponges
The detailed structure of ZnO doped with 5 at.% (metal) of the large aliovalent Eu3+-ions was investigated using EXAFS to describe the local Eu and Zn coordination. The microstructure, crystalline phases, contents and ZnO unit-cell parameters for the ZnO:5%Eu sponges synthesised at 200 to 900 oC were obtained by XRD, SEM, and TEM analysis. XRD showed peaks solely of h-ZnO for the 600 oC sample, while heating at 700 oC and higher caused phase separation into h-ZnO:Eu and c-Eu2O3. XRD showed a close to zero increase in ZnO unit cell-volume of ca. 0.4 vol%, compared to un-doped ZnO for the non-phase separated, clean oxide made at 600 oC. The Zn EXAFS data showed an almost intact local ZnO structure. The Eu EXAFS showed an unusually low coordination number (CN) of ca. 5 for the 200-600 oC samples, while the CN increased for higher temperatures, in concert with the formation of c-Eu2O3. 23 DFT-generated theoretical ZnO structures containing Eu-clusters built from 1 to 4 Eu3+-Zn2+-vacancy- Eu3+ pairs were compared with the experimental data. The lowest formation energies and ZnO unit-cell volume increase versus un-doped ZnO (0.6-0.7 vol%), were obtained when combining two or four Eu3+-Zn2+-vacancy- Eu3+ pairs into Eu4 and Eu8 clusters showing an average Eu CN of ca. 5. These theoretically determined lowest energy structures were all in good agreement with the experimental results obtained by EXAFS and XRD. Photoluminescence excitation and emission spectra performed on the ZnO:5at%Eu sponges obtained at various temperatures, showed strong quenching of the characteristic Eu3+ transitions for samples obtained at 600 and 800 °C, most likely due to changes in the ZnO defect states, which are crucial for Eu3+ excitation, and due to self-quenching upon Eu clustering and c- Eu2O3 phase separation. Thus, the optical data further supported Eu clustering found by EXAFS, DFT and XRD techniques, corroborating structure-property relationships in these materials. Overall, as far as we can find, the findings reported herein point to a doping structure very different from those previously proposed in the literature. It demonstrates that the semiconductor ZnO can host molecular-sized clusters of metal-oxides, very dissimilar to ZnO.
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