铝掺杂对NiTsPc薄膜结构和光学性能的影响

IF 1 4区 材料科学
H. K. Hassun, M. H. Mustafa, R. H. Athab, B. K. Al-Maiyaly, B. H. Hussein
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引用次数: 0

摘要

采用真空蒸发技术制备的(NiTsPc)薄膜具有较高的朗诵率和广泛的应用前景,在(200±20nm)厚度的室温下倾倒在玻璃基板上,并在200℃下退火1小时后,以不同比例(0.01,0.03)掺杂Al。此外,通过x射线衍射研究了铝掺杂百分比对溅落(Ni Ts Pc)薄膜表征的刺激,从所获得的结果来看,所有的薄膜都具有多晶的性质,以及XRD针对溅落的多晶,根据铝掺杂比例,结果表明,SEM暴露的表面是均匀的。利用第一意识形态计算,我们证明了与整个样品的直接能隙相邻的适当带隙和光学性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of dopant of aluminum on the structural and optical properties of NiTsPc thin films
The (NiTsPc) thin films operating by vacuum evaporation technique are high recital and good desirable for number of applications, were dumped on glass substrates at room temperature with (200±20nm) thickness and doped with Al at different percentage (0.01,0.03) besides annealing the sample with 200˚C for 1 hours . The stimuluses of aluminum dopant percentage on characterization of the dropped (Ni Ts Pc) thin films were studied through X-ray diffraction in addition from the attained results, were all the films have polycrystalline in nature, as well the fallouts of XRD aimed at film illustrations polycrystalline, depending on the Al ratio doping, the results, SEM exposed the surface is regularly homogeneous. Utilizing first-ideologies calculations, we demonstration that appropriate band gaps and optical properties adjacent to that of direct energy gap intended for wholly samples.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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