双InGaAs/InAs通道对inp基hemt直流和射频性能的影响

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2022-06-01 DOI:10.15251/jor.2022.183.411

H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun

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引用次数: 1

摘要

为了改善InP基HEMT的直流和射频特性，设计了双InGaAs/InAs沟道结构，并对其进行了数值模拟研究。分析了饱和沟道电流、跨导、亚阈值斜率、漏极诱导势垒降低和频率特性。对具有双InGaAs/InAs沟道和InGaAs沟道的器件进行了比较。通过使用双InGaAs/InAs沟道，获得了1019.7mS/mm的最大跨导，并且还获得了较低的亚阈值斜率值和漏极引起的势垒降低。具有双InGaAs/InAs沟道结构的器件之所以具有优异的性能，主要是由于增强了沟道区电子的限制。此外，在双InGaAs/InAs沟道结构中获得了758.7GHz的最大振荡频率。这些结果表明，具有双InGaAs/InAs沟道结构的InP基HEMT是一种很有前途的高频应用候选者。

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Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs

The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.