Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.