反应磁控溅射法制备的富氧TaOx薄膜的电阻开关行为

IF 2.2 4区材料科学 Q2 MATERIALS SCIENCE, CERAMICS

Journal of Asian Ceramic Societies Pub Date : 2023-05-27 DOI:10.1080/21870764.2023.2216563

Ziheng Ding, Jia-Lin Tang, F. Hu, Wei Zhang

{"title":"反应磁控溅射法制备的富氧TaOx薄膜的电阻开关行为","authors":"Ziheng Ding, Jia-Lin Tang, F. Hu, Wei Zhang","doi":"10.1080/21870764.2023.2216563","DOIUrl":null,"url":null,"abstract":"ABSTRACT In this work, Ta2O5 films were first deposited on Si substrates by reactive magnetron sputtering of a Ta metal target at various substrate temperatures, RF powers and sputtering pressures. The crystal characteristics of these films can be effectively tailored by controlling the sputtering process. Based on the optimized process parameters, tantalum oxide (TaOx) films with different oxygen component content were sputtered on ITO buffered Si substrates and comparatively investigated. The results show that the film with Ta/TaOx/ITO structure has a resistance switching (RS) behavior and its conduction mechanism is closely related to the O2-/O concentration related to the oxygen partial pressure at the dielectric layer and electrode interface. This study provides an in-depth understanding of the component/structure design and structure-activity relationship for high-performance TaOx-based resistive memory.","PeriodicalId":15130,"journal":{"name":"Journal of Asian Ceramic Societies","volume":"11 1","pages":"338 - 346"},"PeriodicalIF":2.2000,"publicationDate":"2023-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Resistive switching behaviors of oxygen-rich TaOx films prepared by reactive magnetron sputtering\",\"authors\":\"Ziheng Ding, Jia-Lin Tang, F. Hu, Wei Zhang\",\"doi\":\"10.1080/21870764.2023.2216563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ABSTRACT In this work, Ta2O5 films were first deposited on Si substrates by reactive magnetron sputtering of a Ta metal target at various substrate temperatures, RF powers and sputtering pressures. The crystal characteristics of these films can be effectively tailored by controlling the sputtering process. Based on the optimized process parameters, tantalum oxide (TaOx) films with different oxygen component content were sputtered on ITO buffered Si substrates and comparatively investigated. The results show that the film with Ta/TaOx/ITO structure has a resistance switching (RS) behavior and its conduction mechanism is closely related to the O2-/O concentration related to the oxygen partial pressure at the dielectric layer and electrode interface. This study provides an in-depth understanding of the component/structure design and structure-activity relationship for high-performance TaOx-based resistive memory.\",\"PeriodicalId\":15130,\"journal\":{\"name\":\"Journal of Asian Ceramic Societies\",\"volume\":\"11 1\",\"pages\":\"338 - 346\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Asian Ceramic Societies\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1080/21870764.2023.2216563\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Asian Ceramic Societies","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/21870764.2023.2216563","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}

引用次数: 1

摘要

摘要在本工作中，通过在不同衬底温度、RF功率和溅射压力下对Ta金属靶进行反应磁控溅射，首次在Si衬底上沉积了Ta2O5薄膜。通过控制溅射过程，可以有效地调整这些膜的晶体特性。在优化工艺参数的基础上，在ITO缓冲硅衬底上溅射了不同氧组分含量的钽氧化物（TaOx）薄膜，并进行了比较研究。结果表明，具有Ta/TaOx/ITO结构的薄膜具有电阻切换（RS）行为，其导电机制与介电层和电极界面处的氧分压相关的O2-O浓度密切相关。本研究深入了解了基于TaOx的高性能电阻存储器的组件/结构设计和构效关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Resistive switching behaviors of oxygen-rich TaOx films prepared by reactive magnetron sputtering

ABSTRACT In this work, Ta2O5 films were first deposited on Si substrates by reactive magnetron sputtering of a Ta metal target at various substrate temperatures, RF powers and sputtering pressures. The crystal characteristics of these films can be effectively tailored by controlling the sputtering process. Based on the optimized process parameters, tantalum oxide (TaOx) films with different oxygen component content were sputtered on ITO buffered Si substrates and comparatively investigated. The results show that the film with Ta/TaOx/ITO structure has a resistance switching (RS) behavior and its conduction mechanism is closely related to the O2-/O concentration related to the oxygen partial pressure at the dielectric layer and electrode interface. This study provides an in-depth understanding of the component/structure design and structure-activity relationship for high-performance TaOx-based resistive memory.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Asian Ceramic Societies Materials Science-Ceramics and Composites

CiteScore

5.00

自引率

4.30%

发文量

审稿时长

10 weeks

期刊介绍： The Journal of Asian Ceramic Societies is an open access journal publishing papers documenting original research and reviews covering all aspects of science and technology of Ceramics, Glasses, Composites, and related materials. These papers include experimental and theoretical aspects emphasizing basic science, processing, microstructure, characteristics, and functionality of ceramic materials. The journal publishes high quality full papers, letters for rapid publication, and in-depth review articles. All papers are subjected to a fair peer-review process.