{"title":"利用功率放大器实现直流到直流变换器","authors":"Aissatou Hamadou","doi":"10.21833/aeee.2020.03.001","DOIUrl":null,"url":null,"abstract":"In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.","PeriodicalId":32861,"journal":{"name":"Annals of Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implementation of direct current to direct current converter exploiting power amplifier\",\"authors\":\"Aissatou Hamadou\",\"doi\":\"10.21833/aeee.2020.03.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.\",\"PeriodicalId\":32861,\"journal\":{\"name\":\"Annals of Electrical and Electronic Engineering\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annals of Electrical and Electronic Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21833/aeee.2020.03.001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annals of Electrical and Electronic Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21833/aeee.2020.03.001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Implementation of direct current to direct current converter exploiting power amplifier
In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.
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