纳米级场效应晶体管的电学特性

Q4 Engineering

International Journal of Nanoparticles Pub Date : 2017-08-29 DOI:10.1504/IJNP.2017.10007133

Sana Kausar, S. Joshi

{"title":"纳米级场效应晶体管的电学特性","authors":"Sana Kausar, S. Joshi","doi":"10.1504/IJNP.2017.10007133","DOIUrl":null,"url":null,"abstract":"In this paper structure of a H-passivated silicon nanowire along [111] direction with hexagonal cross section is defined by using Virtual nanolab (VNL), and set up a nanoscale field effect transistor (FET) structure with a wrap-around gate. Then the transmission spectrum and conductance is computed as the gate bias is varied. The device characteristic curve and conductance with respect to gate voltage is studied. Also, the effect of doping of Al atom on characteristic curve and conductance of nanoscale field effect transistor is analysed.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"9 1","pages":"111"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical properties of nanoscale field effect transistor\",\"authors\":\"Sana Kausar, S. Joshi\",\"doi\":\"10.1504/IJNP.2017.10007133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper structure of a H-passivated silicon nanowire along [111] direction with hexagonal cross section is defined by using Virtual nanolab (VNL), and set up a nanoscale field effect transistor (FET) structure with a wrap-around gate. Then the transmission spectrum and conductance is computed as the gate bias is varied. The device characteristic curve and conductance with respect to gate voltage is studied. Also, the effect of doping of Al atom on characteristic curve and conductance of nanoscale field effect transistor is analysed.\",\"PeriodicalId\":14016,\"journal\":{\"name\":\"International Journal of Nanoparticles\",\"volume\":\"9 1\",\"pages\":\"111\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Nanoparticles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1504/IJNP.2017.10007133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Nanoparticles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1504/IJNP.2017.10007133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

本文利用虚拟纳米实验室(Virtual nanolab, VNL)定义了沿[111]方向具有六角形截面的h钝化硅纳米线的结构，并建立了具有环绕栅极的纳米级场效应晶体管(FET)结构。然后计算栅极偏置变化时的透射谱和电导。研究了器件的特性曲线和电导随栅电压的变化规律。分析了Al原子掺杂对纳米场效应晶体管特性曲线和电导的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical properties of nanoscale field effect transistor

In this paper structure of a H-passivated silicon nanowire along [111] direction with hexagonal cross section is defined by using Virtual nanolab (VNL), and set up a nanoscale field effect transistor (FET) structure with a wrap-around gate. Then the transmission spectrum and conductance is computed as the gate bias is varied. The device characteristic curve and conductance with respect to gate voltage is studied. Also, the effect of doping of Al atom on characteristic curve and conductance of nanoscale field effect transistor is analysed.

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来源期刊

International Journal of Nanoparticles Engineering-Mechanical Engineering

CiteScore

1.60

自引率

0.00%

发文量