{"title":"微波用双晕双介质三材料环栅MOSFET散射参数的激发","authors":"N. Gupta, Prashanth Kumar","doi":"10.15598/AEEE.V19I1.3788","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.5000,"publicationDate":"2021-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications\",\"authors\":\"N. Gupta, Prashanth Kumar\",\"doi\":\"10.15598/AEEE.V19I1.3788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":7268,\"journal\":{\"name\":\"Advances in Electrical and Electronic Engineering\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2021-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Electrical and Electronic Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15598/AEEE.V19I1.3788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Electrical and Electronic Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15598/AEEE.V19I1.3788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications