有机热电用掺杂共轭聚合物中的电荷输运

IF 6.1 Q2 CHEMISTRY, PHYSICAL
Dorothea Scheunemann, Emmy Järsvall, Jian Liu, D. Beretta, S. Fabiano, M. Caironi, M. Kemerink, Christian Müller
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引用次数: 11

摘要

近年来,用于热电应用的共轭聚合物的研究取得了巨大进展,伴随着分子掺杂作为实现所需高导电性的手段的兴趣激增。对掺杂过程、聚合物薄膜的结构和能量特性以及由此产生的热电行为之间的复杂关系的详细理解正在慢慢出现。本文综述了通过分子掺杂提高p型和n型共轭聚合物导电性的最新进展和策略。讨论了聚合物和掺杂的化学设计、加工条件和纳米结构对掺杂效率和掺杂态稳定性的影响。关注半导体主体掺杂体系的电和热输运特性与塞贝克系数的相互依赖关系。探讨了提高热电性能的策略,如聚合物骨架在体和薄膜几何形状上的单轴排列,聚合物介电常数的操纵以及掺杂剂尺寸的变化。理论和实验的结合预计将产生新的化学设计原理和加工方案,最终将产生下一代有机热电材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Charge transport in doped conjugated polymers for organic thermoelectrics
Research on conjugated polymers for thermoelectric applications has made tremendous progress in recent years, which is accompanied by surging interest in molecular doping as a means to achieve the high electrical conductivities that are required. A detailed understanding of the complex relationship between the doping process, the structural as well as energetic properties of the polymer films, and the resulting thermoelectric behavior is slowly emerging. This review summarizes recent developments and strategies that permit enhancing the electrical conductivity of p- and n-type conjugated polymers via molecular doping. The impact of the chemical design of both the polymer and the dopant, the processing conditions, and the resulting nanostructure on the doping efficiency and stability of the doped state are discussed. Attention is paid to the interdependence of the electrical and thermal transport characteristics of semiconductor host-dopant systems and the Seebeck coefficient. Strategies that permit to improve the thermoelectric performance, such as an uniaxial alignment of the polymer backbone in both bulk and thin film geometries, manipulation of the dielectric constant of the polymer, and the variation of the dopant size, are explored. A combination of theory and experiment is predicted to yield new chemical design principles and processing schemes that will ultimately give rise to the next generation of organic thermoelectric materials.
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