{"title":"用于2.4 GHz低能量RF接收机的0.4 V有源偏置LNA","authors":"Giovana Ceolin, Lucas Compassi Severo","doi":"10.29292/jics.v17i2.559","DOIUrl":null,"url":null,"abstract":"To meet low power requirements for Internet of Things (IoT) applications, the power dissipation of RF transceivers must be very low. As the Low Noise Amplifier (LNA) is one of the most energy consuming parts of an RF receiver, its power optimization is necessary for modern IoT devices. This work presents a 170 $\\mu$W LNA capable of operating at 2.4 GHz when powered by a 0.4 V source. It is based on an inverter-based amplifier with improved gate bias voltage and automatic forward bulk biasing to operate at the moderated channel inversion level. A biasing metric is explored to analyze the best dimensions and bulk bias voltages for the NMOS transistor. Post-layout simulation results shown a 2.8 dB noise and competitive specification values compared to the state-of-the-art low-voltage LNAs.","PeriodicalId":39974,"journal":{"name":"Journal of Integrated Circuits and Systems","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"0.4 V Active Biased LNA for 2.4 GHz Low Energy RF Receivers\",\"authors\":\"Giovana Ceolin, Lucas Compassi Severo\",\"doi\":\"10.29292/jics.v17i2.559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To meet low power requirements for Internet of Things (IoT) applications, the power dissipation of RF transceivers must be very low. As the Low Noise Amplifier (LNA) is one of the most energy consuming parts of an RF receiver, its power optimization is necessary for modern IoT devices. This work presents a 170 $\\\\mu$W LNA capable of operating at 2.4 GHz when powered by a 0.4 V source. It is based on an inverter-based amplifier with improved gate bias voltage and automatic forward bulk biasing to operate at the moderated channel inversion level. A biasing metric is explored to analyze the best dimensions and bulk bias voltages for the NMOS transistor. Post-layout simulation results shown a 2.8 dB noise and competitive specification values compared to the state-of-the-art low-voltage LNAs.\",\"PeriodicalId\":39974,\"journal\":{\"name\":\"Journal of Integrated Circuits and Systems\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29292/jics.v17i2.559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29292/jics.v17i2.559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
0.4 V Active Biased LNA for 2.4 GHz Low Energy RF Receivers
To meet low power requirements for Internet of Things (IoT) applications, the power dissipation of RF transceivers must be very low. As the Low Noise Amplifier (LNA) is one of the most energy consuming parts of an RF receiver, its power optimization is necessary for modern IoT devices. This work presents a 170 $\mu$W LNA capable of operating at 2.4 GHz when powered by a 0.4 V source. It is based on an inverter-based amplifier with improved gate bias voltage and automatic forward bulk biasing to operate at the moderated channel inversion level. A biasing metric is explored to analyze the best dimensions and bulk bias voltages for the NMOS transistor. Post-layout simulation results shown a 2.8 dB noise and competitive specification values compared to the state-of-the-art low-voltage LNAs.
期刊介绍:
This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.