新型AIn2O4 (A = Ca, Sr, Na)材料的电子结构、光学和输运性质的Ab-initio研究

IF 2.4 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
B. Gul, Muhammad Salman Khan, Gulzar A. Khan, H. Ahmad
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引用次数: 0

摘要

在这里,使用密度泛函理论框架内的第一性原理计算,我们报道了与Aln2O4(A=Ca、Sr和Na)尖晶石氧化物的结构稳定性、电子、光学和热电性能有关的结果。在这三种材料中,CaIn2O4和NaIn2O4具有直接带隙半导体性质,而SrIn2O4显示出间接带隙半导体特性。这些材料的宽能带隙表明,存在的键本质上是强共价的。这三种材料的态密度计算也有力地支持了能带结构的结果,这也验证了它们的半导体性质。我们计算的态密度图显示了总体相似的趋势,表明CaIn2O4材料中价带的顶部主要来源于p态,SrIn2O4和NaIn2O4的价带顶部是由于氧阴离子的s态。此外,还详细计算和检验了这些新型尖晶石氧化物的线性光学常数,如复介电函数、折射率、电子能量损失函数、吸收系数和反射光谱,以确定它们在光电子器件中的可能应用。还计算了热电输运参数,并深入介绍了所获得的结果,表明这些材料适用于热电器件的应用。从本质上讲,目前的努力必须有助于分立和集成半导体器件应用的进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ab-initio study about the electronic structure, optical, and transport properties of novel AIn2O4 (A = Ca, Sr, and Na) materials
Here, using first-principles calculations within the framework of density functional theory, we reported results relating to the structural stability, electronic, optical, and thermoelectric properties of AIn2O4 (A = Ca, Sr, and Na) spinel oxides. Among the three materials CaIn2O4, and NaIn2O4 have a direct bandgap semiconductor nature, whereas the SrIn2O4 shows an indirect bandgap semiconductor nature. These materials’ broad energy bandgaps reveal that the bonds present are strongly covalent in nature. The results of the band structures are also strongly supported by the calculated density of states for the three materials, which also validates their semiconducting nature. Our calculated density of states plots shows an overall similarity trend, indicating that the top of the valence bands in the CaIn2O4 materials originate primarily from the p-states and for SrIn2O4, and NaIn2O4 are due to the s-states of the oxygen anions. Additionally, the linear optical constants like the complex dielectric function, the refractive index, the electron energy loss function, the absorption coefficient, and the reflectivity spectra of these novel spinel oxides are computed and examined in detail for their possible applications in optoelectronic devices. The thermoelectric transport parameters were also calculated, and the findings obtained are presented in depth, indicating that these materials are suitable for thermoelectric device applications. Essentially, the present effort must assist the progress of discrete and integrated semiconductor device applications.
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来源期刊
CiteScore
3.30
自引率
5.60%
发文量
96
审稿时长
1.7 months
期刊介绍: Serving the multidisciplinary materials community, the journal aims to publish new research work that advances the understanding and prediction of material behaviour at scales from atomistic to macroscopic through modelling and simulation. Subject coverage: Modelling and/or simulation across materials science that emphasizes fundamental materials issues advancing the understanding and prediction of material behaviour. Interdisciplinary research that tackles challenging and complex materials problems where the governing phenomena may span different scales of materials behaviour, with an emphasis on the development of quantitative approaches to explain and predict experimental observations. Material processing that advances the fundamental materials science and engineering underpinning the connection between processing and properties. Covering all classes of materials, and mechanical, microstructural, electronic, chemical, biological, and optical properties.
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