{"title":"28 nm FDSOI CMOS中的21–41 GHz带TLT匹配网络的共栅LNA","authors":"Joo-Yeol Lee, Songcheol Hong","doi":"10.1109/LMWC.2022.3169066","DOIUrl":null,"url":null,"abstract":"A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled ( $k=0.86$ ) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1051-1054"},"PeriodicalIF":2.9000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS\",\"authors\":\"Joo-Yeol Lee, Songcheol Hong\",\"doi\":\"10.1109/LMWC.2022.3169066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled ( $k=0.86$ ) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.\",\"PeriodicalId\":13130,\"journal\":{\"name\":\"IEEE Microwave and Wireless Components Letters\",\"volume\":\"32 1\",\"pages\":\"1051-1054\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2022-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Microwave and Wireless Components Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/LMWC.2022.3169066\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3169066","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS
A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled ( $k=0.86$ ) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.
期刊介绍:
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.