Yongle Qi , Denggui Wang , Jianjun Zhou , Kai Zhang , Yuechan Kong , Suzhen Wu , Tangsheng Chen
{"title":"x射线辐照对p-GaN和MIS栅极AlGaN/GaN hemt阈值电压的影响","authors":"Yongle Qi , Denggui Wang , Jianjun Zhou , Kai Zhang , Yuechan Kong , Suzhen Wu , Tangsheng Chen","doi":"10.1016/j.npe.2020.11.001","DOIUrl":null,"url":null,"abstract":"<div><p>Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption, we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm. The p-GaN-based device was found to be more robust with a stable threshold voltage, whereas the threshold voltage of the device with a metal-insulator-semiconductor gate was found to shift first in the negative and then the positive direction. This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices. As such, the p-GaN-gate-based GaN HEMT provides a promising solution for use as an electric source in space.</p></div>","PeriodicalId":87330,"journal":{"name":"Nanotechnology and Precision Engineering","volume":"3 4","pages":"Pages 241-243"},"PeriodicalIF":2.7000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.npe.2020.11.001","citationCount":"2","resultStr":"{\"title\":\"Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates\",\"authors\":\"Yongle Qi , Denggui Wang , Jianjun Zhou , Kai Zhang , Yuechan Kong , Suzhen Wu , Tangsheng Chen\",\"doi\":\"10.1016/j.npe.2020.11.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption, we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm. The p-GaN-based device was found to be more robust with a stable threshold voltage, whereas the threshold voltage of the device with a metal-insulator-semiconductor gate was found to shift first in the negative and then the positive direction. This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices. As such, the p-GaN-gate-based GaN HEMT provides a promising solution for use as an electric source in space.</p></div>\",\"PeriodicalId\":87330,\"journal\":{\"name\":\"Nanotechnology and Precision Engineering\",\"volume\":\"3 4\",\"pages\":\"Pages 241-243\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2020-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.npe.2020.11.001\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology and Precision Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589554020300362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology and Precision Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589554020300362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption, we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm. The p-GaN-based device was found to be more robust with a stable threshold voltage, whereas the threshold voltage of the device with a metal-insulator-semiconductor gate was found to shift first in the negative and then the positive direction. This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices. As such, the p-GaN-gate-based GaN HEMT provides a promising solution for use as an electric source in space.