Esmaeil Farajpour Bonab, Adam Jaroš, Zahra Badri, L. Tučková, M. Straka, C. Foroutan‐Nejad
{"title":"Spinristor:分子电子学的瑞士军刀","authors":"Esmaeil Farajpour Bonab, Adam Jaroš, Zahra Badri, L. Tučková, M. Straka, C. Foroutan‐Nejad","doi":"10.33774/chemrxiv-2021-9xgrq","DOIUrl":null,"url":null,"abstract":"Here, we propose and provide in silico proof of concept of a spinristor; a new molecular electronic component that combines a spin-filter, a rectifier, and a switch, in a single molecule for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to the source, drain, and a pair of gate electrodes. The spin- and electronic polarization due to the enclosed metal leads to differential rectification of the electrons at low voltages applied between the source-drain electrodes, VSD. The position of the encapsulated ion can be switched by a combination of a high VSD and a voltage applied between gate electrodes, VG, to switch the direction of the rectification and spin-filtering ratio. The system can thus be used as a switching rectifier and spin-filter, a spinristor. To the best of our knowledge, such a system has no macroscopic counterpart in electronics.","PeriodicalId":72565,"journal":{"name":"ChemRxiv : the preprint server for chemistry","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spinristor: A Swiss Army Knife of Molecular Electronics\",\"authors\":\"Esmaeil Farajpour Bonab, Adam Jaroš, Zahra Badri, L. Tučková, M. Straka, C. Foroutan‐Nejad\",\"doi\":\"10.33774/chemrxiv-2021-9xgrq\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, we propose and provide in silico proof of concept of a spinristor; a new molecular electronic component that combines a spin-filter, a rectifier, and a switch, in a single molecule for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to the source, drain, and a pair of gate electrodes. The spin- and electronic polarization due to the enclosed metal leads to differential rectification of the electrons at low voltages applied between the source-drain electrodes, VSD. The position of the encapsulated ion can be switched by a combination of a high VSD and a voltage applied between gate electrodes, VG, to switch the direction of the rectification and spin-filtering ratio. The system can thus be used as a switching rectifier and spin-filter, a spinristor. To the best of our knowledge, such a system has no macroscopic counterpart in electronics.\",\"PeriodicalId\":72565,\"journal\":{\"name\":\"ChemRxiv : the preprint server for chemistry\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ChemRxiv : the preprint server for chemistry\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.33774/chemrxiv-2021-9xgrq\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ChemRxiv : the preprint server for chemistry","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33774/chemrxiv-2021-9xgrq","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spinristor: A Swiss Army Knife of Molecular Electronics
Here, we propose and provide in silico proof of concept of a spinristor; a new molecular electronic component that combines a spin-filter, a rectifier, and a switch, in a single molecule for in-memory processing. It builds on the idea of an open-shell transition metal ion enclosed within an elliptical fullerene connected to the source, drain, and a pair of gate electrodes. The spin- and electronic polarization due to the enclosed metal leads to differential rectification of the electrons at low voltages applied between the source-drain electrodes, VSD. The position of the encapsulated ion can be switched by a combination of a high VSD and a voltage applied between gate electrodes, VG, to switch the direction of the rectification and spin-filtering ratio. The system can thus be used as a switching rectifier and spin-filter, a spinristor. To the best of our knowledge, such a system has no macroscopic counterpart in electronics.