低温退火对低电压高迁移率Hf-In-ZnO/HfO2 tft态密度的影响

Q4 Engineering

Journal of Integrated Circuits and Systems Pub Date : 2021-12-31 DOI:10.29292/jics.v16i3.561

I. Hernández, I. Garduño, A. Cerdeira, B. Iñíguez, M. Estrada

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引用次数: 1

摘要

在本文中，我们报道了热退火对聚甲基丙烯酸甲酯(PMMA)钝化的底栅薄膜晶体管的影响，该晶体管以非晶态氧化铪(HfO2)为栅极介质，非晶态氧化铪-铟-锌(a-HIZO)为半导体，在低于200℃的温度下制备。结果表明，沉积半导体层后，在200℃的N2中进行热退火，可以得到VTH =0.55 V, mFE>250 cm2/Vs, SS=200 mV/dec，对应Dit= 1 × 1012 cm-2eV-1和Ion/Ioff>107的tft。射频溅射沉积的HfO2层介电常数为19.5，器件工作电压范围为2v。结合高k栅极介质和高载流子浓度的a- hizo层，局域态密度降低，得到了场效应迁移率的重要提高。

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Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures below 200 oC

In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as semiconductor, fabricated at temperatures below 200 oC. It is shown that TFTs, with VTH =0.55 V, mFE>250 cm2/Vs, SS=200 mV/dec corresponding to Dit= 1x1012 cm-2eV-1 and Ion/Ioff>107, can be obtained, using a thermal annealing at 200 oC in N2, after the semiconductor layer is deposited. The dielectric constant of the HfO2 layer deposited by RF sputtering was 19.5, allowing devices to work within the operating voltage range of 2 V. An important increase of the field effect mobility is obtained, combining a high-k gate dielectric and a high carrier concentration a-HIZO layer, with a lower density of localized states.

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来源期刊

Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.90

自引率

0.00%

发文量

期刊介绍： This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.