Hock Leong Chee, Yufeng Kok, T. N. Kumar, Haider A. F. Almurib
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Sense amplifier for ReRAM-based crossbar memory systems
ABSTRACT A voltage-mode sense amplifier circuit designed for resistive random-access memory (ReRAM)-based memory arrays is proposed. The sense amplifier is designed comprising of an inverting buffer so that it can operate at a very low voltage (150 mV), which is the typical READ output voltages of a ReRAM cell while the proposed differential comparator design utilises a reduced number of transistors (20%) compared with conventional design to determine the logic states of the ReRAM cell. A simulation with a 2 × 2 memory crossbar is performed and compared with existing voltage-mode and current-mode sense amplifiers and the proposed circuit shows better READ time (32% and 85%) and energy performance (54% and 59%) than existing methods.
期刊介绍:
International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.