金属卤化物钙钛矿场效应晶体管研究进展

IF 3.7 3区工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Information Display Pub Date : 2021-07-29 DOI:10.1080/15980316.2021.1957725

Huihui Zhu, A. Liu, Yong‐Young Noh

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引用次数: 12

摘要

金属卤化物钙钛矿半导体有可能用于制造具有高载流子迁移率的场效应晶体管(fet)。本文总结了三维(3D)铅基和二维(2D)锡基钙钛矿场效应管的最新进展，确定了电特性和稳定性的演变，然后讨论了突出的挑战，并展望了这种电子材料家族用于有源矩阵显示器背板驱动器的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent progress on metal halide perovskite field-effect transistors

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.

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来源期刊

Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

7.10

自引率

5.40%

发文量

审稿时长

30 weeks