金属卤化物钙钛矿场效应晶体管研究进展

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Huihui Zhu, A. Liu, Yong‐Young Noh
{"title":"金属卤化物钙钛矿场效应晶体管研究进展","authors":"Huihui Zhu, A. Liu, Yong‐Young Noh","doi":"10.1080/15980316.2021.1957725","DOIUrl":null,"url":null,"abstract":"Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2021-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Recent progress on metal halide perovskite field-effect transistors\",\"authors\":\"Huihui Zhu, A. Liu, Yong‐Young Noh\",\"doi\":\"10.1080/15980316.2021.1957725\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.\",\"PeriodicalId\":16257,\"journal\":{\"name\":\"Journal of Information Display\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2021-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Information Display\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1080/15980316.2021.1957725\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Information Display","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/15980316.2021.1957725","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 12

摘要

金属卤化物钙钛矿半导体有可能用于制造具有高载流子迁移率的场效应晶体管(fet)。本文总结了三维(3D)铅基和二维(2D)锡基钙钛矿场效应管的最新进展,确定了电特性和稳定性的演变,然后讨论了突出的挑战,并展望了这种电子材料家族用于有源矩阵显示器背板驱动器的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent progress on metal halide perovskite field-effect transistors
Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信