抽象NBTI模型

IF 1 Q4 COMPUTER SCIENCE, INFORMATION SYSTEMS
Stephan Adolf, W. Nebel
{"title":"抽象NBTI模型","authors":"Stephan Adolf, W. Nebel","doi":"10.1515/itit-2021-0005","DOIUrl":null,"url":null,"abstract":"Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.","PeriodicalId":43953,"journal":{"name":"IT-Information Technology","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2021-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Abstraction NBTI model\",\"authors\":\"Stephan Adolf, W. Nebel\",\"doi\":\"10.1515/itit-2021-0005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.\",\"PeriodicalId\":43953,\"journal\":{\"name\":\"IT-Information Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2021-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IT-Information Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1515/itit-2021-0005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IT-Information Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/itit-2021-0005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
引用次数: 0

摘要

摘要负偏置温度不稳定性(NBTI)是晶体管老化的主要影响之一,可能导致系统运行期间的定时故障。因此,人们有兴趣在设计时预测这种影响。在这项工作中,引入了一个抽象NBTI模型,使用两个抽象参数来减少基于陷阱的NBTI模型的状态空间,并应用状态转换来合并可变应力条件。这种转变比传统方法更快。目前,转换为估计的阈值电压损伤是一个非常耗时的过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Abstraction NBTI model
Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.
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来源期刊
IT-Information Technology
IT-Information Technology COMPUTER SCIENCE, INFORMATION SYSTEMS-
CiteScore
3.80
自引率
0.00%
发文量
29
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