使用蒙特卡罗计算的倍他伏打电池GaN建模

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2022-11-03 DOI:10.15251/jor.2022.185.691

Z. Tiouti, A. Talhi, B. Azeddine, A. Helmaoui

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引用次数: 0

摘要

在本研究中，我们使用蒙特卡罗计算代码模拟了倍他伏打电池在Ni63源轰击下固体靶上每个点产生的电子-空穴对的浓度;据报道，这个模型是电子相互作用的准确表示。从这个模拟中我们可以得到GaN/GaN结中产生的电子空穴对作为深度函数的分布，这种分布使我们能够找到依赖于厚度的少数载流子过量的浓度，可以将其表示为函数并注入到连续性方程中，从而确定扩散电流，从而确定所选倍他伏打的特性。该模型已在Ni-63/GaN/GaN结构中进行了测试，能量为17 KeV。

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Modeling of betavoltaic cells GaN using a Monte Carlo calculation

In this study, we use a Monte Carlo calculation code to simulate the concentration of electron-hole pairs generated of each point in the solid targets under a bombardment of Ni63 source for betavoltaic cells; this model is reported to be an accurate representation of electron interaction.From this simulation we can obtain the distribution of electron-hole pairs generated in GaN/GaN junction as a function of the depth, this distribution allowed us to find the concentrations of minority carriers excess depending on the thickness, which can represent as function and inject into the continuity equations for determine the diffusion current and then the characteristics of betavoltaic chosen. The model has been tested for Ni-63/GaN/GaN structure, with energy 17 KeV.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.