烧结温度对CaBi4Ti4O15化合物结构性能的影响

IF 1 4区 材料科学
I. M. Abdulmajeed, S. Ibraheem
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引用次数: 0

摘要

采用传统陶瓷工艺成功制备了多晶CaBi4Ti4O15(CBT)陶瓷。对所制备的粉末在不同温度下的X射线衍射光谱进行了研究(650℃、850℃和1050℃。烧结温度是获得高结晶度和非常纯的CBT化合物的非常有效的因素。使用X射线衍射分析的产物结构证实,高纯度多晶相的形成揭示了在1050℃时存在铋层状钙钛矿相Aurivilius正交晶体结构ᶹ C.使用场发射扫描电子显微镜对所制备的样品进行形貌分析(FESEM)。对于1050烧结的产品,它显示出在约149-349nm范围内的微晶颗粒ᶹ C、 它显示出致密的微观结构,并存在较大的正交畸变。介电常数和介电损耗是在室温下作为频率的函数进行测量的。CBT的介电常数随烧结温度的升高而增大。此外,在1050烧结的样品ᶹC表现出良好的介电性能和较低的tan值.
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound
Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050ᶹ C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at1050ᶹ C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 ᶹC exhibits good dielectric properties and lower value of tan .
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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