FAP特性对CaF2晶体固定磨料抛光的影响

Q3 Engineering

International Journal of Nanomanufacturing Pub Date : 2019-03-29 DOI:10.1504/IJNM.2019.10020301

Jun Li, Yongkai Tang, Longlong Song, Y. Zhu, D. Zuo

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引用次数: 1

摘要

衬垫是化学机械抛光过程中承受机械去除材料压力的重要因素。由于固定在研磨垫中的磨料，固定研磨垫（FAP）变得更加重要，并影响晶片的材料去除和表面质量。分析了FAP的特性、磨料类型、粒度和基体硬度，并研究了在CaF2晶体的固定磨料抛光中对材料去除率和表面质量的影响。结果表明，采用3-5μm金刚石磨料和软基体的FAP抛光CaF2晶体是合适的。在CaF2晶体的固定磨料抛光中，表面粗糙度Sa为7.27nm，材料去除率为192nm/min，可以获得更好的表面质量。

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Effect of FAP characteristics on fixed abrasive polishing of CaF2 crystal

Pad is an important factor, which bears pressure to mechanically remove material in chemical mechanical polishing process. Owing to the abrasives fixed in pad, fixed abrasive pad (FAP) becomes more important and influences material removal and surface quality of wafer. The characteristics of FAP, abrasive type, particle size and matrix hardness, were analysed and the effect on material removal rate (MRR) and surface quality was investigated in fixed abrasive polishing of CaF2 crystal. The results indicated that FAP with 3-5 μm diamond abrasive and soft matrix is suited to polish CaF2 crystal. And the better surface quality with surface roughness Sa 7.27 nm and material removal rate 192 nm/min, can be achieved in fixed abrasive polishing of CaF2 crystal.

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来源期刊

International Journal of Nanomanufacturing Engineering-Industrial and Manufacturing Engineering

CiteScore

0.60

自引率

0.00%

发文量