Qualitative Analysis of DG-TFET Structures with Gate Material Engineering

The paper largely focuses on enhancing device parameters of a Double Gate Tunnel Field Effect Transistor structure such as ON current, OFF Current,transconductance and ratio of ON current to OFF current (ION / IOFF) using hetero dielectric gate material. The paper presents three state of art of dual gate TFET i.e., Conventional Double Gate TFET (CDGTFET), horizontally placed Dual Material Double Gate TFET (HDMDGTFET), vertically placed Dual Material Double Gate TFET (VDMDGTFET). The dual material dielectric combinations used in the structures are (SiO2-TiO2), (HfO2-TiO2) and (SiO2-SiC). The Structures are being modeled using Silvaco Atlas tool. Simulations of these structures are carried out and various electrical parameters have been obtained. The results obtained from simulation of these structures are being presented and discussed in this paper. Comparison of the three structures is carried out and resulted in the reduction of ON Current and OFF Current is observed.