1300nm垂直腔半导体光放大器中掺p分布Bragg反射镜电学特性的比较研究

IF 1.2 Q3 MULTIDISCIPLINARY SCIENCES

ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY Pub Date : 2021-06-03 DOI:10.14500/ARO.10741

F. Chaqmaqchee

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引用次数: 3

摘要

本文研究了不同直径的两种p型GaAs/Al0.9Ga0.1As和两种p型GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As分布Bragg反射镜(DBRs)结构对1300 nm垂直腔面发射激光器(VCSELs)和垂直腔半导体光放大器(VCSOAs)特性的影响。对GaAs/Al0.9Ga0.1As线性dbr和GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As梯度dbr进行了电学表征和电流-电压(IV)的霍尔测量，温度范围为13 ~ 300 K。因此，采用梯度复合接口技术设计了p型dbr。较小的平台直径用于减少垂直和纵向阻力，限制热效应并改善VCSEL/VCSOA器件的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Comparative Study of Electrical Characterization of P-Doped Distributed Bragg Reflectors Mirrors for 1300 nm Vertical Cavity Semiconductor Optical Amplifiers

This paper presents an electrical analysis of various diameters of two p-types of GaAs/Al0.9Ga0.1As and two p-types of GaAs/Al0.3Ga0.7As/Al0.9Ga0.1As distributed Bragg reflectors (DBRs) mirrors structure grown on undoped and on p-doped GaAs, which affects the characteristics of 1300 nm vertical cavity surface emitting lasers (VCSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs). Electrical characterizations and Hall measurements of current−voltage (IV) for GaAs/Al0.9Ga0.1As linear DBRs and GaAs/Al0.3Ga0.7As/Al0.9Ga0.1 As graded DBRs were also performed at temperatures between 13 and 300 K. Consequently, p-type DBRs are designed with graded composition interfaces technique. The smaller mesa diameters are used to reduce vertical and longitudinal resistances and to limit the heating effect and improve the characteristics of VCSEL/VCSOA devices.

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来源期刊

ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY MULTIDISCIPLINARY SCIENCES-

自引率

33.30%

发文量

审稿时长

16 weeks