InP基n-p-n变质δ掺杂异质结双极晶体管直流和射频特性中的帽层效应

Q3 Engineering

International Journal of Electronics Letters Pub Date : 2021-07-07 DOI:10.1080/21681724.2021.1941280

M. Jena, A. Diwarkar, A. Panda, G. Dash

{"title":"InP基n-p-n变质δ掺杂异质结双极晶体管直流和射频特性中的帽层效应","authors":"M. Jena, A. Diwarkar, A. Panda, G. Dash","doi":"10.1080/21681724.2021.1941280","DOIUrl":null,"url":null,"abstract":"ABSTRACT The effect of InGaAsP and InGaAs cap layers in InP n-p-n heterojunction bipolar transistor (HBT) is presented. The common figures of merit (FOM) in each case are compared to assess their potentials for operation at high frequency. The Gummel-Poon plot of experimental reported result has been used to validate the data obtained from simulation using ATLAS module of Silvaco software tool. After models validation in TCAD tool, the DC and RF characteristics of the HBTs with different cap layers are examined and then a comparative analysis is carried out based on the characteristics such as I–V behaviour, frequency response, minimum noise figure and maximum cut-off frequency. With the change in InGaAs cap to InGaAsP cap, the DC current gain increases from 255 to 300, VCE,offset is reduced from 131 to 76 mV, Early Voltage (VA) increases from −42 to −190 V, cut-off frequency ft is increased from 24.34 MHz to 8.04 GHz, and the maximum oscillation of frequency(fmax) is improves from 13.79 to 37.11 GHz","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"10 1","pages":"308 - 320"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/21681724.2021.1941280","citationCount":"0","resultStr":"{\"title\":\"Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor\",\"authors\":\"M. Jena, A. Diwarkar, A. Panda, G. Dash\",\"doi\":\"10.1080/21681724.2021.1941280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ABSTRACT The effect of InGaAsP and InGaAs cap layers in InP n-p-n heterojunction bipolar transistor (HBT) is presented. The common figures of merit (FOM) in each case are compared to assess their potentials for operation at high frequency. The Gummel-Poon plot of experimental reported result has been used to validate the data obtained from simulation using ATLAS module of Silvaco software tool. After models validation in TCAD tool, the DC and RF characteristics of the HBTs with different cap layers are examined and then a comparative analysis is carried out based on the characteristics such as I–V behaviour, frequency response, minimum noise figure and maximum cut-off frequency. With the change in InGaAs cap to InGaAsP cap, the DC current gain increases from 255 to 300, VCE,offset is reduced from 131 to 76 mV, Early Voltage (VA) increases from −42 to −190 V, cut-off frequency ft is increased from 24.34 MHz to 8.04 GHz, and the maximum oscillation of frequency(fmax) is improves from 13.79 to 37.11 GHz\",\"PeriodicalId\":13968,\"journal\":{\"name\":\"International Journal of Electronics Letters\",\"volume\":\"10 1\",\"pages\":\"308 - 320\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1080/21681724.2021.1941280\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/21681724.2021.1941280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/21681724.2021.1941280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

摘要介绍了InP n-p-n异质结双极晶体管（HBT）中InGaAsP和InGaAs帽盖层的作用。比较每种情况下的共同优值（FOM），以评估其在高频操作下的潜力。实验报告结果的Gummel-Poon图已用于验证使用Silvaco软件工具的ATLAS模块模拟获得的数据。在TCAD工具中对模型进行验证后，检查了具有不同覆盖层的HBT的直流和射频特性，然后根据I-V特性、频率响应、最小噪声系数和最大截止频率等特性进行了比较分析。随着InGaAs帽到InGaAsP帽的变化，直流电流增益从255增加到300，VCE，偏移从131降低到76 mV，早期电压（VA）从−42增加到−190 V，截止频率ft从24.34 MHz增加到8.04 GHz，最大频率振荡（fmax）从13.79提高到37.11 GHz

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Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

ABSTRACT The effect of InGaAsP and InGaAs cap layers in InP n-p-n heterojunction bipolar transistor (HBT) is presented. The common figures of merit (FOM) in each case are compared to assess their potentials for operation at high frequency. The Gummel-Poon plot of experimental reported result has been used to validate the data obtained from simulation using ATLAS module of Silvaco software tool. After models validation in TCAD tool, the DC and RF characteristics of the HBTs with different cap layers are examined and then a comparative analysis is carried out based on the characteristics such as I–V behaviour, frequency response, minimum noise figure and maximum cut-off frequency. With the change in InGaAs cap to InGaAsP cap, the DC current gain increases from 255 to 300, VCE,offset is reduced from 131 to 76 mV, Early Voltage (VA) increases from −42 to −190 V, cut-off frequency ft is increased from 24.34 MHz to 8.04 GHz, and the maximum oscillation of frequency(fmax) is improves from 13.79 to 37.11 GHz

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来源期刊

International Journal of Electronics Letters Engineering-Electrical and Electronic Engineering

CiteScore

1.80

自引率

0.00%

发文量

期刊介绍： International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.