高功率半导体激光泵浦源研究进展

Q4 Engineering
M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi
{"title":"高功率半导体激光泵浦源研究进展","authors":"M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi","doi":"10.11884/HPLPB202032.200236","DOIUrl":null,"url":null,"abstract":"High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.","PeriodicalId":39871,"journal":{"name":"强激光与粒子束","volume":"32 1","pages":"121010-1-121010-10"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Research progress of high power semiconductor laser pump source\",\"authors\":\"M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi\",\"doi\":\"10.11884/HPLPB202032.200236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.\",\"PeriodicalId\":39871,\"journal\":{\"name\":\"强激光与粒子束\",\"volume\":\"32 1\",\"pages\":\"121010-1-121010-10\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"强激光与粒子束\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.11884/HPLPB202032.200236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"强激光与粒子束","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.11884/HPLPB202032.200236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 5

摘要

高功率半导体激光器是固态激光器和光纤激光器的主要泵浦源。激光泵浦源性能的提高,直接推动了固态激光器、光纤激光器等激光器的发展。本文介绍了8xx nm和9xx nm半导体激光泵浦源的最新研究进展。8xx nm单发射器激光器输出功率研究水平已达到18.8 W@95µm, 8xx nm激光棒输出功率研究水平已达到1.8 kW(QCW), 9xx nm单发射器激光器输出功率研究水平已达到35 W@100µm, 9xx nm激光棒输出功率研究水平已达到1.98 kW(QCW)。线宽<1 nm的窄线宽半导体激光器输出功率可达14 W。展望了半导体激光泵浦源未来的发展趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research progress of high power semiconductor laser pump source
High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
强激光与粒子束
强激光与粒子束 Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
11289
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信