M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi
{"title":"高功率半导体激光泵浦源研究进展","authors":"M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi","doi":"10.11884/HPLPB202032.200236","DOIUrl":null,"url":null,"abstract":"High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.","PeriodicalId":39871,"journal":{"name":"强激光与粒子束","volume":"32 1","pages":"121010-1-121010-10"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Research progress of high power semiconductor laser pump source\",\"authors\":\"M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi\",\"doi\":\"10.11884/HPLPB202032.200236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.\",\"PeriodicalId\":39871,\"journal\":{\"name\":\"强激光与粒子束\",\"volume\":\"32 1\",\"pages\":\"121010-1-121010-10\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"强激光与粒子束\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.11884/HPLPB202032.200236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"强激光与粒子束","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.11884/HPLPB202032.200236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Research progress of high power semiconductor laser pump source
High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.