Yang Wang, Jieyu Li, Weipeng Wei, Pei Cao, Wenmiao Cao
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Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection
ABSTRACT This paper proposes an enhanced asymmetric dual directional silicon controlled rectifier (EADDSCR) for the applications of bidirectional electrostatic discharge (ESD) protection. The ADDSCR and EADDSCR were prepared in a 0.18 µm Bipolar CMOS DMOS (BCD) process and measured with the transmission line pulsing tester. By adding N+ injection regions in the cathode and anode, a new vertical SCR path is formed in EADDSCR, so that the failure current of EADDSCR can reach twice as much as that of ADDSCR with only a small increase in the area of EADDSCR. Moreover, the FoM of EADDSCR can be increased to more than 81.19 µA/µm. Finally, the improved device possesses a smaller on resistance and is more suitable for high-voltage circuit applications.
期刊介绍:
International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.