溶胶-凝胶法制备nd掺杂ZnO薄膜的光学和电学性质

Q3 Engineering

International Journal of Nanomanufacturing Pub Date : 2017-10-20 DOI:10.1504/IJNM.2017.10008406

H. He, Zuoli He, Q. Shen

{"title":"溶胶-凝胶法制备nd掺杂ZnO薄膜的光学和电学性质","authors":"H. He, Zuoli He, Q. Shen","doi":"10.1504/IJNM.2017.10008406","DOIUrl":null,"url":null,"abstract":"ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.","PeriodicalId":14170,"journal":{"name":"International Journal of Nanomanufacturing","volume":"13 1","pages":"295"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical and electrical properties of Nd-doped ZnO films prepared by sol-gel method\",\"authors\":\"H. He, Zuoli He, Q. Shen\",\"doi\":\"10.1504/IJNM.2017.10008406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.\",\"PeriodicalId\":14170,\"journal\":{\"name\":\"International Journal of Nanomanufacturing\",\"volume\":\"13 1\",\"pages\":\"295\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Nanomanufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1504/IJNM.2017.10008406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Nanomanufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1504/IJNM.2017.10008406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

采用化学溶液沉积法制备了Nd含量为0% ~ 0.81%的ZnO薄膜，并用x射线衍射、场发射扫描电镜、紫外-可见和发光分光光度法以及电测量对其进行了表征。实验结果表明，随着钕含量的增加，薄膜具有纳米级的粒径。Nd的掺入使其在紫外-可见光范围内的透过率、带隙和电阻率发生了明显的变化。当Nd含量为0.42%时，薄膜具有最佳的光学和电学性能。薄膜还表现出较强的带隙发射和与本征缺陷相关的极弱发射。

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Optical and electrical properties of Nd-doped ZnO films prepared by sol-gel method

ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.

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来源期刊

International Journal of Nanomanufacturing Engineering-Industrial and Manufacturing Engineering

CiteScore

0.60

自引率

0.00%

发文量