{"title":"用准费米能级近似计算pn结太阳能电池的电流密度和量子效率","authors":"A. Deyasi, A. Sarkar","doi":"10.1504/IJNP.2019.10019134","DOIUrl":null,"url":null,"abstract":"Current density and quantum efficiency of p-n junction GaAs solar cell is analytically investigated incorporating the effect of excess carriers due to photon incidence. Carrier transport equations for both types of carriers are solved involving both the conduction mechanisms along with generation rate. Change of dark current is reported in presence of varying operating conditions, and modulation of quantum efficiency is obtained by varying structural parameters. Results are useful for accurate estimation of figure of merit, which will play key role in photovoltaic applications.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Calculating current density and quantum efficiency of p-n junction solar cell with quasi-Fermi level approximation\",\"authors\":\"A. Deyasi, A. Sarkar\",\"doi\":\"10.1504/IJNP.2019.10019134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current density and quantum efficiency of p-n junction GaAs solar cell is analytically investigated incorporating the effect of excess carriers due to photon incidence. Carrier transport equations for both types of carriers are solved involving both the conduction mechanisms along with generation rate. Change of dark current is reported in presence of varying operating conditions, and modulation of quantum efficiency is obtained by varying structural parameters. Results are useful for accurate estimation of figure of merit, which will play key role in photovoltaic applications.\",\"PeriodicalId\":14016,\"journal\":{\"name\":\"International Journal of Nanoparticles\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Nanoparticles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1504/IJNP.2019.10019134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Nanoparticles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1504/IJNP.2019.10019134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Calculating current density and quantum efficiency of p-n junction solar cell with quasi-Fermi level approximation
Current density and quantum efficiency of p-n junction GaAs solar cell is analytically investigated incorporating the effect of excess carriers due to photon incidence. Carrier transport equations for both types of carriers are solved involving both the conduction mechanisms along with generation rate. Change of dark current is reported in presence of varying operating conditions, and modulation of quantum efficiency is obtained by varying structural parameters. Results are useful for accurate estimation of figure of merit, which will play key role in photovoltaic applications.