超越高速逻辑应用的门全绕双纳米片CMOS的性能展望

Q4 Engineering

Journal of Integrated Circuits and Systems Pub Date : 2022-09-17 DOI:10.29292/jics.v17i2.617

E. Simoen, Carlos H. S. Coelho, Vanessa C.P. da Silva, J. Martino, P. Agopian, A. Oliveira, B. Crețu, A. Veloso

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引用次数: 0

摘要

本文介绍了栅极全环（GAA）双纳米片（NS）MOSFET在78K至473K（200℃）的宽温度范围内的性能特性。重点是模拟操作，显示出良好的潜力。除了晶体管长度外，还研究了金属栅极有效功函数和纳米片之间垂直距离的影响。其中，已经观察到清晰的零温度系数（ZTC）栅极电压，其可以通过考虑阈值电压和最大跨导随温度的偏移来建模。已经注意到晶体管效率和单位增益频率之间的折衷，由此最佳操作点出现在强反转状态中。还证明了设计简单模拟电路的可行性。最后，与其他技术节点相比，对低频噪声行为的详细研究产生了闪烁噪声功率谱密度的良好值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications

In this review paper, the performance characteristics of Gate-All-Around (GAA) double nanosheet (NS) MOSFETs are described over a broad temperature range, from 78 K to 473 K (200 oC). Emphasis is on the analog operation, showing good potential. Besides the transistor length, the impact of the metal gate Effective Work Function and the vertical distance between the nanosheets has been studied. Among others, a clear Zero Temperature Coefficient (ZTC) gate voltage has been observed that can be modeled by considering the shift with temperature of the threshold voltage and the maximum transconductance. A trade-off has been noticed between the transistor efficiency and the unit gain frequency, whereby the optimal operation point occurs in strong inversion regime. The feasibility of designing simple analog circuits has also been demonstrated. Finally, a detailed investigation of the low-frequency noise behavior yields good values for the flicker noise Power Spectral Density in comparison with other technology nodes.

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来源期刊

Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.90

自引率

0.00%

发文量

期刊介绍： This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.