二维p-GaAs中电子输运中的Efros-Shklovskii跳变

IF 0.3 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Lithuanian Journal of Physics Pub Date : 2020-08-03 DOI:10.3952/physics.v60i3.4303

S. Dlimi, L. Limouny, J. Hemine, A. Echchelh, A. E. Kaaouachi

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引用次数: 7

摘要

a大学物理学系,人文学院(Ibn Zohr b、P 8106 b、Hay赫拉80000摩洛哥阿加迪尔电子系统的实验室、信息处理、机械、能源和伊本Tofaïl大学理学院,国土面积Laboratory of Morocco) c、高能Ibn Tofaïl工程与材料科学学院、大学、国土面积Morocco)邮箱:dlimi1975@gmail.com

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Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

a Physics Department, Faculty of Sciences, University Ibn Zohr, B. P 8106, Hay Dakhla, 80000 Agadir, Morocco b Laboratoire des systèmes électroniques, traitement de l’information, mécanique et énergétique, Faculté des Sciences, Université Ibn Tofaïl, Kénitra, Morocco c Laboratory of Energetic Engineering and Materials, Faculty of Sciences, Ibn Tofaïl University, Kénitra, Morocco Email: dlimi1975@gmail.com

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来源期刊

Lithuanian Journal of Physics 物理-物理：综合

CiteScore

0.90

自引率

16.70%

发文量

审稿时长

>12 weeks

期刊介绍： The main aim of the Lithuanian Journal of Physics is to reflect the most recent advances in various fields of theoretical, experimental, and applied physics, including: mathematical and computational physics; subatomic physics; atoms and molecules; chemical physics; electrodynamics and wave processes; nonlinear and coherent optics; spectroscopy.