γ-量子辐照Pb1−XMnXSe外延膜的电物理性质

IF 1.4 Q3 PHYSICS, MULTIDISCIPLINARY

Turkish Journal of Physics Pub Date : 2020-03-01 DOI:10.3906/fiz-1906-14

R. Madatov, R. Mamishova, M. Mamedov, J. Ismayilov, Ulviya Faradjova

{"title":"γ-量子辐照Pb1−XMnXSe外延膜的电物理性质","authors":"R. Madatov, R. Mamishova, M. Mamedov, J. Ismayilov, Ulviya Faradjova","doi":"10.3906/fiz-1906-14","DOIUrl":null,"url":null,"abstract":"Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb1-xMnx Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb1-xMnx Se x = 0.01 epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrophysical properties of Pb1−XMnXSe epitaxial films irradiated by γ-quanta\",\"authors\":\"R. Madatov, R. Mamishova, M. Mamedov, J. Ismayilov, Ulviya Faradjova\",\"doi\":\"10.3906/fiz-1906-14\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb1-xMnx Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb1-xMnx Se x = 0.01 epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.\",\"PeriodicalId\":46003,\"journal\":{\"name\":\"Turkish Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Turkish Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3906/fiz-1906-14\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3906/fiz-1906-14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了γ-量子对玻璃衬底上分子团簇形成的p型Pb1-xMnx-Se外延膜的电物理和光电性能的影响。研究表明，在D>10kGy剂量的γ-量子辐照下，p型Pb1-xMnx-Sex=0.01外延膜可产生电离能分别为0.14eV和0.175eV的受主型局域能级。在80-180K的低温范围内光电导率的增加是由于0.14eV能级的放电，但在高温范围内光电流变化率的降低是由于以0.175eV能量作为复合中心的局部能级的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrophysical properties of Pb1−XMnXSe epitaxial films irradiated by γ-quanta

Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb1-xMnx Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb1-xMnx Se x = 0.01 epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Turkish Journal of Physics PHYSICS, MULTIDISCIPLINARY-

CiteScore

3.50

自引率

0.00%

发文量

期刊介绍： The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.