InGaAs/InAlAs spad作为单光子探测器的一部分建模以预测其电学参数

IF 0.7 4区物理与天体物理 Q4 OPTICS

Journal of Russian Laser Research Pub Date : 2023-05-13 DOI:10.1007/s10946-023-10118-w

A. V. Losev, A. A. Filyaev, V. V. Zavodilenko, A. A. Gorbatsevich

{"title":"InGaAs/InAlAs spad作为单光子探测器的一部分建模以预测其电学参数","authors":"A. V. Losev, A. A. Filyaev, V. V. Zavodilenko, A. A. Gorbatsevich","doi":"10.1007/s10946-023-10118-w","DOIUrl":null,"url":null,"abstract":"<div><div><p>We construct a model of InGaAs/InAlAs single-photon avalanche diodes in the T-CAD computing environment, in order to predict their electrical parameters, when they work as a part of single-photon detectors. The obtained results are applicable for optimizing the design of single-photon avalanche photodiodes for the use as sensitive elements in light detection devices. The main advantage of the developed model of InGaAs/InAlAs single-photon diodes is the fact that it can be integrated in the electrical control circuit of the single-photon detector to simulate the operation of the diode, which allows not only setting up the detector control system but also testing new circuit solutions.</p></div></div>","PeriodicalId":663,"journal":{"name":"Journal of Russian Laser Research","volume":"44 2","pages":"156 - 162"},"PeriodicalIF":0.7000,"publicationDate":"2023-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling InGaAs/InAlAs Spads as a Part of Single-Photon Detectors to Predict Their Electrical Parameters\",\"authors\":\"A. V. Losev, A. A. Filyaev, V. V. Zavodilenko, A. A. Gorbatsevich\",\"doi\":\"10.1007/s10946-023-10118-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div><p>We construct a model of InGaAs/InAlAs single-photon avalanche diodes in the T-CAD computing environment, in order to predict their electrical parameters, when they work as a part of single-photon detectors. The obtained results are applicable for optimizing the design of single-photon avalanche photodiodes for the use as sensitive elements in light detection devices. The main advantage of the developed model of InGaAs/InAlAs single-photon diodes is the fact that it can be integrated in the electrical control circuit of the single-photon detector to simulate the operation of the diode, which allows not only setting up the detector control system but also testing new circuit solutions.</p></div></div>\",\"PeriodicalId\":663,\"journal\":{\"name\":\"Journal of Russian Laser Research\",\"volume\":\"44 2\",\"pages\":\"156 - 162\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2023-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Russian Laser Research\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10946-023-10118-w\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Russian Laser Research","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10946-023-10118-w","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

摘要

我们在T-CAD计算环境中构建了InGaAs/InAlAs单光子雪崩二极管的模型，以预测它们作为单光子探测器的一部分时的电学参数。所得结果可用于优化设计单光子雪崩光电二极管作为光探测器件的敏感元件。所开发的InGaAs/InAlAs单光子二极管模型的主要优点是它可以集成在单光子探测器的电气控制电路中，以模拟二极管的工作，不仅可以建立探测器控制系统，还可以测试新的电路解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling InGaAs/InAlAs Spads as a Part of Single-Photon Detectors to Predict Their Electrical Parameters

We construct a model of InGaAs/InAlAs single-photon avalanche diodes in the T-CAD computing environment, in order to predict their electrical parameters, when they work as a part of single-photon detectors. The obtained results are applicable for optimizing the design of single-photon avalanche photodiodes for the use as sensitive elements in light detection devices. The main advantage of the developed model of InGaAs/InAlAs single-photon diodes is the fact that it can be integrated in the electrical control circuit of the single-photon detector to simulate the operation of the diode, which allows not only setting up the detector control system but also testing new circuit solutions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Russian Laser Research 物理-光学

CiteScore

1.50

自引率

22.20%

发文量

审稿时长

2 months

期刊介绍： The journal publishes original, high-quality articles that follow new developments in all areas of laser research, including: laser physics; laser interaction with matter; properties of laser beams; laser thermonuclear fusion; laser chemistry; quantum and nonlinear optics; optoelectronics; solid state, gas, liquid, chemical, and semiconductor lasers.