基于第四系AlInGaN末量子势垒的深紫外激光二极管

IF 0.7 4区物理与天体物理 Q4 OPTICS

Journal of Russian Laser Research Pub Date : 2023-07-13 DOI:10.1007/s10946-023-10139-5

Mengshuang Yin, Aoxiang Zhang, Xien Sang, Yuan Xu, Fang Wang, Juin J. Lion, Yuhuai Liu

{"title":"基于第四系AlInGaN末量子势垒的深紫外激光二极管","authors":"Mengshuang Yin, Aoxiang Zhang, Xien Sang, Yuan Xu, Fang Wang, Juin J. Lion, Yuhuai Liu","doi":"10.1007/s10946-023-10139-5","DOIUrl":null,"url":null,"abstract":"<div>We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here, we investigate three LQB structures – Al0.63In0.03Ga0.34N LQB, Al0.65In0.03Ga0.32N LQ band, and Al0.68In0.03Ga0.29N LQB. We find that the Al0.68In0.03Ga0.29N LQB structure significantly reduces the electron leakage in the p-region, improves the carrier injection efficiency in the active region, and increases the stimulated radiation recombination rate of the DUV LDs. The simulation results indicate that the threshold current and threshold voltage decrease from 50.93 mA and 4.70 V for the Al0.63In0.03Ga0.34N LQB structure to 42.47 mA and 4.63 V for the Al0.68In0.03Ga0.29N LQB structure, respectively. At an injection current of 100 mA, the slope efficiency increases to 1.12 W/A. Compared with the conventional ternary AlGaN LQB structure, the quaternary AlInGaN LQB structure significantly improves the performance of the DUV LDs, which is crucial for the development of the DUV LDs.</div>","PeriodicalId":663,"journal":{"name":"Journal of Russian Laser Research","volume":"44 3","pages":"339 - 347"},"PeriodicalIF":0.7000,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlGaN-Based Deep-Ultraviolet Laser Diodes with Quaternary AlInGaN Last Quantum Barrier\",\"authors\":\"Mengshuang Yin, Aoxiang Zhang, Xien Sang, Yuan Xu, Fang Wang, Juin J. Lion, Yuhuai Liu\",\"doi\":\"10.1007/s10946-023-10139-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here, we investigate three LQB structures – Al0.63In0.03Ga0.34N LQB, Al0.65In0.03Ga0.32N LQ band, and Al0.68In0.03Ga0.29N LQB. We find that the Al0.68In0.03Ga0.29N LQB structure significantly reduces the electron leakage in the p-region, improves the carrier injection efficiency in the active region, and increases the stimulated radiation recombination rate of the DUV LDs. The simulation results indicate that the threshold current and threshold voltage decrease from 50.93 mA and 4.70 V for the Al0.63In0.03Ga0.34N LQB structure to 42.47 mA and 4.63 V for the Al0.68In0.03Ga0.29N LQB structure, respectively. At an injection current of 100 mA, the slope efficiency increases to 1.12 W/A. Compared with the conventional ternary AlGaN LQB structure, the quaternary AlInGaN LQB structure significantly improves the performance of the DUV LDs, which is crucial for the development of the DUV LDs.</div>\",\"PeriodicalId\":663,\"journal\":{\"name\":\"Journal of Russian Laser Research\",\"volume\":\"44 3\",\"pages\":\"339 - 347\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2023-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Russian Laser Research\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10946-023-10139-5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Russian Laser Research","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10946-023-10139-5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

摘要

为了提高深紫外(DUV)激光二极管(ld)的性能，我们提出了一种四元AlInGaN末量子势垒(LQB)结构。本文研究了Al0.63In0.03Ga0.34N LQB、Al0.65In0.03Ga0.32N LQ波段和Al0.68In0.03Ga0.29N LQB三种LQB结构。我们发现Al0.68In0.03Ga0.29N LQB结构显著降低了p区电子泄漏，提高了活性区载流子注入效率，提高了DUV ld的受激辐射复合率。仿真结果表明，Al0.63In0.03Ga0.34N LQB结构的阈值电流和阈值电压分别从50.93 mA和4.70 V降低到42.47 mA和4.63 V。注入电流为100 mA时，斜率效率增加到1.12 W/A。与传统的三元AlInGaN LQB结构相比，四元AlInGaN LQB结构显著提高了DUV ld的性能，这对DUV ld的发展至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

AlGaN-Based Deep-Ultraviolet Laser Diodes with Quaternary AlInGaN Last Quantum Barrier

We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here, we investigate three LQB structures – Al_0.63In_0.03Ga_0.34N LQB, Al_0.65In_0.03Ga_0.32N LQ band, and Al_0.68In_0.03Ga_0.29N LQB. We find that the Al_0.68In_0.03Ga_0.29N LQB structure significantly reduces the electron leakage in the p-region, improves the carrier injection efficiency in the active region, and increases the stimulated radiation recombination rate of the DUV LDs. The simulation results indicate that the threshold current and threshold voltage decrease from 50.93 mA and 4.70 V for the Al_0.63In_0.03Ga_0.34N LQB structure to 42.47 mA and 4.63 V for the Al_0.68In_0.03Ga_0.29N LQB structure, respectively. At an injection current of 100 mA, the slope efficiency increases to 1.12 W/A. Compared with the conventional ternary AlGaN LQB structure, the quaternary AlInGaN LQB structure significantly improves the performance of the DUV LDs, which is crucial for the development of the DUV LDs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Russian Laser Research 物理-光学

CiteScore

1.50

自引率

22.20%

发文量

审稿时长

2 months

期刊介绍： The journal publishes original, high-quality articles that follow new developments in all areas of laser research, including: laser physics; laser interaction with matter; properties of laser beams; laser thermonuclear fusion; laser chemistry; quantum and nonlinear optics; optoelectronics; solid state, gas, liquid, chemical, and semiconductor lasers.