静水压力对InGaN/GaN多量子阱激光二极管俄歇系数的影响

IF 1.1 4区 物理与天体物理 Q4 NANOSCIENCE & NANOTECHNOLOGY
R. Yahyazadeh, Z. Hashempour
{"title":"静水压力对InGaN/GaN多量子阱激光二极管俄歇系数的影响","authors":"R. Yahyazadeh, Z. Hashempour","doi":"10.1117/1.JNP.17.026011","DOIUrl":null,"url":null,"abstract":"Abstract. A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6  ×  6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77  MV  /  cm, and the Auger coefficient decreased down to 2.1  ×  10  −  31 and 0.6  ×  10  −  31  cm6 s  −  1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"026011 - 026011"},"PeriodicalIF":1.1000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode\",\"authors\":\"R. Yahyazadeh, Z. Hashempour\",\"doi\":\"10.1117/1.JNP.17.026011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract. A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6  ×  6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77  MV  /  cm, and the Auger coefficient decreased down to 2.1  ×  10  −  31 and 0.6  ×  10  −  31  cm6 s  −  1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.\",\"PeriodicalId\":16449,\"journal\":{\"name\":\"Journal of Nanophotonics\",\"volume\":\"17 1\",\"pages\":\"026011 - 026011\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanophotonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.JNP.17.026011\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanophotonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JNP.17.026011","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0

摘要

摘要利用数值模型分析了c面InGaN/GaN多量子阱激光二极管(MQWLD)在静水压力下的俄歇系数。采用有限差分技术获得了InGaN/GaN MQWLD的能量本征值及其相应的本征函数,并通过6  ×  施加静水压力下的6k.p方法。研究发现,高达10GPa的压力变化会增加量子阱和势垒中的载流子密度以及有效带隙。在此基础上,精确结合能降低,电场速率增加到0.77  MV  /  cm,俄歇系数下降到2.1  ×  10  −  31和0.6  ×  10  −  31  cm6 s  −  1。此外,计算表明,空穴-电子(CHHS)和电子-电子-空穴(CCCH)俄歇系数对俄歇系数的贡献最大。我们的研究为InGaN基发光二极管在静水压力下俄歇复合速率下降的起源提供了更详细的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode
Abstract. A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6  ×  6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77  MV  /  cm, and the Auger coefficient decreased down to 2.1  ×  10  −  31 and 0.6  ×  10  −  31  cm6 s  −  1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Nanophotonics
Journal of Nanophotonics 工程技术-光学
CiteScore
2.60
自引率
6.70%
发文量
42
审稿时长
3 months
期刊介绍: The Journal of Nanophotonics publishes peer-reviewed papers focusing on the fabrication and application of nanostructures that facilitate the generation, propagation, manipulation, and detection of light from the infrared to the ultraviolet regimes.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信