Study on the Effect of BCl 3 Gas in Ti/Al/Ti Dry Etching Process

IF 0.7 4区物理与天体物理 Q3 CRYSTALLOGRAPHY

液晶与显示 Pub Date : 2019-09-05 DOI:10.3788/YJYXS20193409.0857

李知勋陈兵刘杰吴国特苗占成李淳东

{"title":"Study on the Effect of BCl 3 Gas in Ti/Al/Ti Dry Etching Process","authors":"李知勋陈兵刘杰吴国特苗占成李淳东","doi":"10.3788/YJYXS20193409.0857","DOIUrl":null,"url":null,"abstract":"随着显示技术的发展，Ti/Al/Ti材料需求的厚度越来越厚，布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜，后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜（聚酰亚胺等），Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中，BCl3气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响，实验结果表明：随着BCl3气体流量的增加，Ti/Al/Ti侧面保护膜的厚度越来越薄，对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"34 1","pages":"857-861"},"PeriodicalIF":0.7000,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ti/Al/Ti干法刻蚀工艺中BCl 3 气体作用研究\",\"authors\":\"李知勋陈兵刘杰吴国特苗占成李淳东\",\"doi\":\"10.3788/YJYXS20193409.0857\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"随着显示技术的发展，Ti/Al/Ti材料需求的厚度越来越厚，布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜，后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜（聚酰亚胺等），Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中，BCl3气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响，实验结果表明：随着BCl3气体流量的增加，Ti/Al/Ti侧面保护膜的厚度越来越薄，对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。\",\"PeriodicalId\":10128,\"journal\":{\"name\":\"液晶与显示\",\"volume\":\"34 1\",\"pages\":\"857-861\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2019-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"液晶与显示\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3788/YJYXS20193409.0857\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"液晶与显示","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3788/YJYXS20193409.0857","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

摘要

With the development of display technology, the thickness required for Ti/Al/Ti materials is becoming thicker and the wiring is becoming narrower. At present, the conventional design in LTPS display technology is to use inorganic films on Ti/Al/Ti material substrates. In the new design of flexible OLED display technology, Ti/Al/Ti substrates gradually use organic films (polyimide, etc.), and the challenges faced by Ti/Al/Ti dry etching process are becoming increasingly significant. This article mainly studies the effect of BCl3 gas on the morphology of Ti/Al/Ti side profile and the etching rate of photoresist in conventional Ti/Al/Ti dry etching process. The experimental results show that as the BCl3 gas flow rate increases, the thickness of Ti/Al/Ti side protective film becomes thinner and the etching rate of PR adhesive decreases. The research results of this article facilitate a better response to the new process of Ti/Al/Ti dry etching of organic films as substrates.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ti/Al/Ti干法刻蚀工艺中BCl 3 气体作用研究

随着显示技术的发展，Ti/Al/Ti材料需求的厚度越来越厚，布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜，后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜（聚酰亚胺等），Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中，BCl3气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响，实验结果表明：随着BCl3气体流量的增加，Ti/Al/Ti侧面保护膜的厚度越来越薄，对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

液晶与显示 CRYSTALLOGRAPHY-

CiteScore

1.40

自引率

50.00%

发文量

4939

期刊介绍：