A. Sylla, N’Guessan Armel Ignace, T. Siaka, J. Vilcot
{"title":"CIGS基太阳能电池界面MoSe2层效应的理论分析","authors":"A. Sylla, N’Guessan Armel Ignace, T. Siaka, J. Vilcot","doi":"10.4236/ojmsi.2021.94022","DOIUrl":null,"url":null,"abstract":"The aim of this work is to analyze the influence of the interfacial MoSe2 layer on the performance of a \n/n-ZnO/i-ZnO/n-Zn(O,S)/p-CIGS/p+-MoSe2/Mo/SLG solar cell. In this investigation, the numerical simulation software AFORS-HET is used to calculate the electrical \ncharacteristics of the cell with and without this MoSe2 layer. Different \nreported experimental works have highlighted the presence of a thin-film MoSe2 layer at the \nCIGS/Mo contact interface. Under a tunneling effect, this MoSe2 layer transforms \nthe Schottky CIGS/Mo contact nature into a quasi-ohmic one. Owing to a heavily \np-doping, the MoSe2 thin layer allows better transport of majority carrier, tunneling them from \nCIGS to Mo. Moreover, the bandgap of MoSe2 is wider than that of the CIGS absorbing layer, such that an electric field is \ngenerated close to the back surface. The presence of this electric field \nreduces carrier recombination at the interface. Under these conditions, we \nexamined the performance of the cell with and without MoSe2 layer. When the \nthickness of the CIGS absorber is in the range from 3.5 μm down to 1.5 μm, the \nefficiency of the cell with a MoSe2 interfacial layer remains almost constant, about 24.6%, while that of the MoSe2-free \nsolar cell decreases from 24.6% to 23.4%. Besides, a Schottky barrier height \nlarger than 0.45 eV severely affects the fill factor and open circuit voltage \nof the solar cell with MoSe2 interface layer compared to the MoSe2-free solar cell.","PeriodicalId":56990,"journal":{"name":"建模与仿真(英文)","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Theoretical Analysis of the Effect of the Interfacial MoSe2 Layer in CIGS-Based Solar Cells\",\"authors\":\"A. Sylla, N’Guessan Armel Ignace, T. Siaka, J. Vilcot\",\"doi\":\"10.4236/ojmsi.2021.94022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this work is to analyze the influence of the interfacial MoSe2 layer on the performance of a \\n/n-ZnO/i-ZnO/n-Zn(O,S)/p-CIGS/p+-MoSe2/Mo/SLG solar cell. In this investigation, the numerical simulation software AFORS-HET is used to calculate the electrical \\ncharacteristics of the cell with and without this MoSe2 layer. Different \\nreported experimental works have highlighted the presence of a thin-film MoSe2 layer at the \\nCIGS/Mo contact interface. Under a tunneling effect, this MoSe2 layer transforms \\nthe Schottky CIGS/Mo contact nature into a quasi-ohmic one. Owing to a heavily \\np-doping, the MoSe2 thin layer allows better transport of majority carrier, tunneling them from \\nCIGS to Mo. Moreover, the bandgap of MoSe2 is wider than that of the CIGS absorbing layer, such that an electric field is \\ngenerated close to the back surface. The presence of this electric field \\nreduces carrier recombination at the interface. Under these conditions, we \\nexamined the performance of the cell with and without MoSe2 layer. When the \\nthickness of the CIGS absorber is in the range from 3.5 μm down to 1.5 μm, the \\nefficiency of the cell with a MoSe2 interfacial layer remains almost constant, about 24.6%, while that of the MoSe2-free \\nsolar cell decreases from 24.6% to 23.4%. Besides, a Schottky barrier height \\nlarger than 0.45 eV severely affects the fill factor and open circuit voltage \\nof the solar cell with MoSe2 interface layer compared to the MoSe2-free solar cell.\",\"PeriodicalId\":56990,\"journal\":{\"name\":\"建模与仿真(英文)\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"建模与仿真(英文)\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.4236/ojmsi.2021.94022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"建模与仿真(英文)","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.4236/ojmsi.2021.94022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Theoretical Analysis of the Effect of the Interfacial MoSe2 Layer in CIGS-Based Solar Cells
The aim of this work is to analyze the influence of the interfacial MoSe2 layer on the performance of a
/n-ZnO/i-ZnO/n-Zn(O,S)/p-CIGS/p+-MoSe2/Mo/SLG solar cell. In this investigation, the numerical simulation software AFORS-HET is used to calculate the electrical
characteristics of the cell with and without this MoSe2 layer. Different
reported experimental works have highlighted the presence of a thin-film MoSe2 layer at the
CIGS/Mo contact interface. Under a tunneling effect, this MoSe2 layer transforms
the Schottky CIGS/Mo contact nature into a quasi-ohmic one. Owing to a heavily
p-doping, the MoSe2 thin layer allows better transport of majority carrier, tunneling them from
CIGS to Mo. Moreover, the bandgap of MoSe2 is wider than that of the CIGS absorbing layer, such that an electric field is
generated close to the back surface. The presence of this electric field
reduces carrier recombination at the interface. Under these conditions, we
examined the performance of the cell with and without MoSe2 layer. When the
thickness of the CIGS absorber is in the range from 3.5 μm down to 1.5 μm, the
efficiency of the cell with a MoSe2 interfacial layer remains almost constant, about 24.6%, while that of the MoSe2-free
solar cell decreases from 24.6% to 23.4%. Besides, a Schottky barrier height
larger than 0.45 eV severely affects the fill factor and open circuit voltage
of the solar cell with MoSe2 interface layer compared to the MoSe2-free solar cell.