CIGS基太阳能电池界面MoSe2层效应的理论分析

A. Sylla, N’Guessan Armel Ignace, T. Siaka, J. Vilcot
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引用次数: 4

摘要

本文的目的是分析界面MoSe2层对a /n-ZnO/i-ZnO/n-Zn(O,S)/p- cigs /p+-MoSe2/Mo/SLG太阳能电池性能的影响。在本研究中,使用数值模拟软件AFORS-HET计算了有和没有MoSe2层的电池的电特性。不同的实验工作都强调了在CIGS/Mo接触界面上存在薄膜MoSe2层。在隧穿效应下,该MoSe2层将肖特基CIGS/Mo接触性质转变为准欧姆性质。由于大量p掺杂,MoSe2薄层可以更好地将大多数载流子从CIGS隧穿到Mo。而且,MoSe2的带隙比CIGS吸收层的带隙更宽,从而在靠近背表面的地方产生电场。电场的存在减少了载流子在界面处的复合。在这些条件下,我们测试了有和没有MoSe2层的电池的性能。当吸收层厚度在3.5 ~ 1.5 μm范围内时,有MoSe2界面层的太阳能电池效率基本保持不变,约为24.6%,而无MoSe2界面层的太阳能电池效率从24.6%下降到23.4%。此外,当肖特基势垒高度大于0.45 eV时,有MoSe2界面层的太阳能电池的填充系数和开路电压都会受到较无MoSe2界面层的太阳能电池的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical Analysis of the Effect of the Interfacial MoSe2 Layer in CIGS-Based Solar Cells
The aim of this work is to analyze the influence of the interfacial MoSe2 layer on the performance of a /n-ZnO/i-ZnO/n-Zn(O,S)/p-CIGS/p+-MoSe2/Mo/SLG solar cell. In this investigation, the numerical simulation software AFORS-HET is used to calculate the electrical characteristics of the cell with and without this MoSe2 layer. Different reported experimental works have highlighted the presence of a thin-film MoSe2 layer at the CIGS/Mo contact interface. Under a tunneling effect, this MoSe2 layer transforms the Schottky CIGS/Mo contact nature into a quasi-ohmic one. Owing to a heavily p-doping, the MoSe2 thin layer allows better transport of majority carrier, tunneling them from CIGS to Mo. Moreover, the bandgap of MoSe2 is wider than that of the CIGS absorbing layer, such that an electric field is generated close to the back surface. The presence of this electric field reduces carrier recombination at the interface. Under these conditions, we examined the performance of the cell with and without MoSe2 layer. When the thickness of the CIGS absorber is in the range from 3.5 μm down to 1.5 μm, the efficiency of the cell with a MoSe2 interfacial layer remains almost constant, about 24.6%, while that of the MoSe2-free solar cell decreases from 24.6% to 23.4%. Besides, a Schottky barrier height larger than 0.45 eV severely affects the fill factor and open circuit voltage of the solar cell with MoSe2 interface layer compared to the MoSe2-free solar cell.
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