银掺杂对CdSe薄膜结构、形貌及光学性能的影响

IF 1 4区 材料科学
R. I. Jasim, E. H. Hadi, S. Chiad, N. Habubi, M. Jadan, J. Addasi
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引用次数: 0

摘要

采用热蒸发的方法,在玻璃基底上合成了掺杂银的CdSe薄膜。根据x射线衍射图,具有沿(100)面优先取向的六边形结构。用原子力显微镜(AFM)测定表面形貌。原子力显微镜(AFM)检测到球形纳米粒子,当(2和4)%的银掺杂时,CdSe薄膜的粗糙度降低,均方根降低。随着掺杂量的增加,光能带隙从1.85 eV减小到1.75 eV。光学分析表明,在CdSe中掺杂Ag会导致带边红移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of silver-doping on the structural, topography and optical CdSe thin films
Using thermal evaporation, thin films of silver-doped CdSe were synthesized on glass bases. A hexagonal structure with a preference orientation along (100) plane according to the X-ray diffraction pattern. The surface topography was determined using Atomic Force Microscopy (AFM). AFM detects spherical nature nanoparticles and roughness rate of the CdSe thin film decreases and the root mean square decreases with (2 and 4) % doping in silver. As the doping content increase, the optical energy bandgap decrease from 1.85 eV to 1.75 eV. Optical analysis indicates that Ag doping in CdSe results in a redshift in band edge.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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