基于忆阻器的材料蕴涵逻辑：内存计算的前奏

Q4 Engineering

International Journal of High Speed Electronics and Systems Pub Date : 2023-07-20 DOI:10.1142/s0129156423500210

A. Mazady, M. Anwar

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引用次数: 0

摘要

我们报道了使用ZnO纳米线基忆阻器的材料隐含（IMP）逻辑的实验演示。该逻辑通过仅为5的高电阻与低电阻之比来证明。这对忆阻器性能提出了不那么严格的要求，忆阻器可以实现具有较低误码率的IMP逻辑操作。证明了忆阻器和基于忆阻器的IMP逻辑性能的过程独立性，并通过放宽对导通和关断状态电阻值范围的限制来实现更实际的逻辑。IMP逻辑在高达100KHz的时钟频率下被验证。

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Memristor-Based Material Implication Logic: Prelude to In-Memory Computing

We report experimental demonstration of Material Implication (IMP) logic using ZnO nanowire-based memristors. The logic is demonstrated with a high-to-low resistance ratio of only five. This imposes much less stringent requirements on memristor performance that can enable IMP logic operation with lower bit error rates. Process independence on memristor and memristor-based IMP logic performance is demonstrated, and a more practical implementation of logic is made by relaxing the restriction imposed on the ranges of the values of on and off state resistances. IMP logic is validated up to a clock frequency of 100 KHz.

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来源期刊

International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.60

自引率

0.00%

发文量

期刊介绍： Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.