Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang
{"title":"飞秒激光制备4H-SiC中硅空位色中心的共聚焦光致发光特性","authors":"Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang","doi":"10.1016/j.npe.2020.11.003","DOIUrl":null,"url":null,"abstract":"<div><p>Silicon-vacancy (V<sub>Si</sub>) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of V<sub>Si</sub> in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of V<sub>Si</sub> were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the V<sub>Si</sub> formation was analyzed, and the three-dimensional distribution of V<sub>Si</sub> defects in the fs laser writing of 4H-SiC was established.</p></div>","PeriodicalId":87330,"journal":{"name":"Nanotechnology and Precision Engineering","volume":"3 4","pages":"Pages 218-228"},"PeriodicalIF":2.7000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2589554020300386/pdfft?md5=ab855e0159fceaf29f83c7cb62ca47b8&pid=1-s2.0-S2589554020300386-main.pdf","citationCount":"15","resultStr":"{\"title\":\"Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser\",\"authors\":\"Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang\",\"doi\":\"10.1016/j.npe.2020.11.003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Silicon-vacancy (V<sub>Si</sub>) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of V<sub>Si</sub> in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of V<sub>Si</sub> were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the V<sub>Si</sub> formation was analyzed, and the three-dimensional distribution of V<sub>Si</sub> defects in the fs laser writing of 4H-SiC was established.</p></div>\",\"PeriodicalId\":87330,\"journal\":{\"name\":\"Nanotechnology and Precision Engineering\",\"volume\":\"3 4\",\"pages\":\"Pages 218-228\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2020-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2589554020300386/pdfft?md5=ab855e0159fceaf29f83c7cb62ca47b8&pid=1-s2.0-S2589554020300386-main.pdf\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnology and Precision Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589554020300386\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology and Precision Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589554020300386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of VSi in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of VSi were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the VSi formation was analyzed, and the three-dimensional distribution of VSi defects in the fs laser writing of 4H-SiC was established.
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