磁场作用下n+-p-p+硅太阳电池基底最佳厚度的测定

C. Thiaw, Mamadou Lamine Ba, M. Ba, G. Diop, Ibrahima Diatta, M. Ndiaye, G. Sissoko
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引用次数: 4

摘要

确定了磁场作用下n+-p-p+双面硅太阳电池的最佳基底厚度。在特定的边界条件下,由相对于基底中多余的少数载流子的磁输运方程得到了光电流。由此推导出载流子在后表面的复合速度表达式。这些复合速度的新表达式是根据基底的深度绘制的,以推断出可以产生高短路光电流的最佳厚度。根据研究范围给出了最佳厚度与磁场的标定关系。研究发现,在太阳能电池制造过程中,外加磁场对材料厚度的影响较大,导致短路电流过大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
n+-p-p+ Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field
Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-p+ under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier’s recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.
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